Charge trapping in organic transistor memories: On the role of electrons and holes

M. Debucquoy; M. Rockelé; J. Genoe; G. H. Gelinck; P. Heremans

doi:10.1016/j.orgel.2009.07.005

Charge trapping in organic transistor memories: On the role of electrons and holes

M. Debucquoy
, M. Rockelé
, J. Genoe
, G. H. Gelinck
, P. Heremans

Research output: Contribution to journal › Article › Academic › peer-review

98 Citations (Scopus)

1 Downloads (Pure)

Abstract

In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity.

Original language	English
Pages (from-to)	1252-1258
Number of pages	7
Journal	Organic Electronics
Volume	10
Issue number	7
DOIs	https://doi.org/10.1016/j.orgel.2009.07.005
Publication status	Published - 1 Nov 2009
Externally published	Yes

Funding

The authors would like to thank K. Maturova from the Department of Applied Physics at the Technische Universiteit Eindhoven for fruitful discussions. M. Debucquoy acknowledges the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen) for financial support. This work was performed in collaboration between IMEC and TNO in the frame of the Holst Centre.

Keywords

Ambipolar
Charge trapping
Memory
Organic transistor
Tunneling

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abstract = "In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity.",

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AU - Heremans, P.

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AB - In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity.

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KW - Tunneling

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Charge trapping in organic transistor memories: On the role of electrons and holes

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Keywords

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