Charge transport in nanoscale vertical organic semiconductor pillar devices

J.G.E. Wilbers; B. Xu; P.A. Bobbert; M.P. de Jong; W.G. van der Wiel

doi:10.1038/srep41171

Charge transport in nanoscale vertical organic semiconductor pillar devices

J.G.E. Wilbers, B. Xu, P.A. Bobbert, M.P. de Jong, W.G. van der Wiel

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Abstract

We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 10 6 A/m 2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

Original language	English
Article number	41171
Number of pages	9
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep41171
Publication status	Published - 24 Jan 2017

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abstract = "We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 10 6 A/m 2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.",

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Charge transport in nanoscale vertical organic semiconductor pillar devices

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