Charge transport in metal/semiconductor/metal devices based on organic semiconductors with an exponential density of states

B. Ramachandhran, H.G.A. Huizing, R. Coehoorn

Research output: Contribution to journalArticleAcademicpeer-review

16 Citations (Scopus)
175 Downloads (Pure)

Abstract

In amorphous org. semiconductors in which electron or hole transport is due to hopping in an exponential d. of states (DOS), the mobility is proportional to nb, where n is the carrier d. and where b increases with increasing width of the DOS. Exact anal. expressions are given for the steady-state and frequency-dependent c.d. in single-carrier metal/semiconductor/metal devices, based on such materials. For b .mchgt. 1, the cross over frequency between a conductive and capacitive ac response is shown to be much larger than the inverse steady-state carrier transit time. The relevance to the anal. of the ac small-signal response in small-mol. and polymer layers, such as are used in org. light-emitting devices, is discussed. [on SciFinder (R)]
Original languageEnglish
Article number233306
Pages (from-to)233306-1/4
Number of pages4
JournalPhysical Review B
Volume73
Issue number23
DOIs
Publication statusPublished - 2006

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