Charge screening in the quantum Hall regime probed by the lateral photoelectric effect

H. Zalinge, van; B. Özyilmaz; A. Böhm; R.W. Heijden, van der; J.H. Wolter; P. Wyder

doi:10.1016/S0921-4526(01)00256-3

Charge screening in the quantum Hall regime probed by the lateral photoelectric effect

H. Zalinge, van, B. Özyilmaz, A. Böhm, R.W. Heijden, van der, J.H. Wolter, P. Wyder

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Electrons are photoelectrically injected into the two-dimensional electron system (2DES) near a standard AlGaAs–GaAs heterojunction by a focussed light spot. The photovoltage in the plane of the 2DES exhibits quantum oscillations with magnetic field that are basically out of phase with respect to the oscillations of the conductivity sxx. This is evidence for the influence of screening effects on the injected charge. At low filling factors a dip is superimposed on the maxima, which points to a competition between screening properties and the expected diffusion effects.

Original language	English
Pages (from-to)	60-64
Journal	Physica B: Condensed Matter
Volume	298
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)00256-3
Publication status	Published - 2001

Access to Document

10.1016/S0921-4526(01)00256-3

Cite this

@article{b2c779f8d8084d309af5998f7373920a,

title = "Charge screening in the quantum Hall regime probed by the lateral photoelectric effect",

abstract = "Electrons are photoelectrically injected into the two-dimensional electron system (2DES) near a standard AlGaAs–GaAs heterojunction by a focussed light spot. The photovoltage in the plane of the 2DES exhibits quantum oscillations with magnetic field that are basically out of phase with respect to the oscillations of the conductivity sxx. This is evidence for the influence of screening effects on the injected charge. At low filling factors a dip is superimposed on the maxima, which points to a competition between screening properties and the expected diffusion effects.",

author = "{Zalinge, van}, H. and B. {\"O}zyilmaz and A. B{\"o}hm and {Heijden, van der}, R.W. and J.H. Wolter and P. Wyder",

year = "2001",

doi = "10.1016/S0921-4526(01)00256-3",

language = "English",

volume = "298",

pages = "60--64",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Charge screening in the quantum Hall regime probed by the lateral photoelectric effect

AU - Zalinge, van, H.

AU - Özyilmaz, B.

AU - Böhm, A.

AU - Heijden, van der, R.W.

AU - Wolter, J.H.

AU - Wyder, P.

PY - 2001

Y1 - 2001

N2 - Electrons are photoelectrically injected into the two-dimensional electron system (2DES) near a standard AlGaAs–GaAs heterojunction by a focussed light spot. The photovoltage in the plane of the 2DES exhibits quantum oscillations with magnetic field that are basically out of phase with respect to the oscillations of the conductivity sxx. This is evidence for the influence of screening effects on the injected charge. At low filling factors a dip is superimposed on the maxima, which points to a competition between screening properties and the expected diffusion effects.

AB - Electrons are photoelectrically injected into the two-dimensional electron system (2DES) near a standard AlGaAs–GaAs heterojunction by a focussed light spot. The photovoltage in the plane of the 2DES exhibits quantum oscillations with magnetic field that are basically out of phase with respect to the oscillations of the conductivity sxx. This is evidence for the influence of screening effects on the injected charge. At low filling factors a dip is superimposed on the maxima, which points to a competition between screening properties and the expected diffusion effects.

U2 - 10.1016/S0921-4526(01)00256-3

DO - 10.1016/S0921-4526(01)00256-3

M3 - Article

VL - 298

SP - 60

EP - 64

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -

Charge screening in the quantum Hall regime probed by the lateral photoelectric effect

Abstract

Access to Document

Fingerprint

Cite this