Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

A.M. Yakunin; A.Y. Silov; P.M. Koenraad; W. Roy, van; J. De Boeck; J.H. Wolter

doi:10.1016/j.spmi.2004.03.055

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

A.M. Yakunin
, A.Y. Silov
, P.M. Koenraad
, W. Roy, van
, J. De Boeck
, J.H. Wolter

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

Abstract

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn/sup 2+/3d/sup 5/ + hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state

Original language	English
Pages (from-to)	539-545
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.055
Publication status	Published - 2003

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title = "Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy",

abstract = "An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn/sup 2+/3d/sup 5/ + hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state",

author = "A.M. Yakunin and A.Y. Silov and P.M. Koenraad and \{Roy, van\}, W. and \{De Boeck\}, J. and J.H. Wolter",

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doi = "10.1016/j.spmi.2004.03.055",

language = "English",

volume = "34",

pages = "539--545",

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TY - JOUR

T1 - Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

AU - Yakunin, A.M.

AU - Silov, A.Y.

AU - Koenraad, P.M.

AU - Roy, van, W.

AU - De Boeck, J.

AU - Wolter, J.H.

PY - 2003

Y1 - 2003

N2 - An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn/sup 2+/3d/sup 5/ + hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state

AB - An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn/sup 2+/3d/sup 5/ + hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state

U2 - 10.1016/j.spmi.2004.03.055

DO - 10.1016/j.spmi.2004.03.055

M3 - Article

SN - 0749-6036

VL - 34

SP - 539

EP - 545

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3-6

ER -

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

Abstract

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