In order to meet the demand of increasing computer speed and memory capacity, industries are striving to reduce the size of computer chips. This miniaturization of computer chips can be achieved by reducing the wavelength in lithography machines to Extreme Ultra-Violet (EUV, 92 eV). The background gas in the lithography machine is partially ionized by the absorption of EUV photons. The study of these low-density (10^15 m-^3) pulsed plasmas is experimentally challenging. We want to study the electron density in these EUV-generated plasmas in transparent gasses (e.g. H2 and He) with low absorption losses at pressures around 1 Pa. Two different diagnostics are investigated at the moment, coherent microwave scattering (CMS) and microwave cavity resonance spectroscopy (MCRS). These two diagnostics are tested on a simulation plasma with similar dimensions and density as the EUV plasma. Preliminary results of MCRS on the simulation plasma are promising. To determine the dissociation degree in the H2 plasma, we plan to perform TALIF measurements.
|Publication status||Published - 2012|
|Event||15th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2012) - Conference centre "Rolduc", Kerkrade, Netherlands|
Duration: 22 Nov 2012 → 23 Nov 2012
|Workshop||15th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2012)|
|Period||22/11/12 → 23/11/12|