Characterizing an extreme ultra-violet generated plasma

R.M. Horst, van der, S. Nijdam, G.M.W. Kroesen

Research output: Contribution to conferencePoster

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Abstract

In order to meet the demand of increasing computer speed and memory capacity, industries are striving to reduce the size of computer chips. This miniaturization of computer chips can be achieved by reducing the wavelength in lithography machines to Extreme Ultra-Violet (EUV, 92 eV). The background gas in the lithography machine is partially ionized by the absorption of EUV photons. The study of these low-density (10^15 m-^3) pulsed plasmas is experimentally challenging. We want to study the electron density in these EUV-generated plasmas in transparent gasses (e.g. H2 and He) with low absorption losses at pressures around 1 Pa. Two different diagnostics are investigated at the moment, coherent microwave scattering (CMS) and microwave cavity resonance spectroscopy (MCRS). These two diagnostics are tested on a simulation plasma with similar dimensions and density as the EUV plasma. Preliminary results of MCRS on the simulation plasma are promising. To determine the dissociation degree in the H2 plasma, we plan to perform TALIF measurements.
Original languageEnglish
Publication statusPublished - 2012
Event15th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2012) - Conference centre "Rolduc", Kerkrade, Netherlands
Duration: 22 Nov 201223 Nov 2012
https://www.tue.nl/fileadmin/content/faculteiten/tn/PMP/Guidelines__PMP__TuMo_/announcement.pdf

Workshop

Workshop15th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 2012)
Abbreviated titleWELTPP-15
CountryNetherlands
CityKerkrade
Period22/11/1223/11/12
Internet address

Bibliographical note

Poster presented Proceedings of the 15th Euregional Workshop on the Exploration of Low Temperature Plasma Physics (WELTPP 15), 22-23 November 2012, Kerkrade, The Netherlands

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