Characterization of waveguide photonic crystal reflectors on indium phosphide membranes

Research output: Contribution to journalArticleAcademicpeer-review

4 Downloads (Pure)

Abstract

We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.
Original languageEnglish
Article number8839111
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume55
Issue number6
DOIs
Publication statusPublished - 16 Sep 2019

Fingerprint

Indium phosphide
indium phosphides
Photonic crystals
reflectors
Waveguides
photonics
membranes
waveguides
Membranes
reflectance
crystals
cavities
Q factors
Distributed Bragg reflectors
Electron beam lithography
Systematic errors
Bragg reflectors
systematic errors
lithography
platforms

Keywords

  • Photonic Integrated Circuits (PIC)
  • photonic crystals
  • nanophotonics
  • Q-factor
  • Photonic integrated circuits
  • Photonic crystals
  • Cavity resonators
  • Silicon
  • III-V semiconductor materials
  • Indium phosphide
  • Optical waveguides

Cite this

@article{261edc33ecdf4a7e9958770bad4e94df,
title = "Characterization of waveguide photonic crystal reflectors on indium phosphide membranes",
abstract = "We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-P{\'e}rot cavities. We experimentally show reflectivities higher than 95{\%} for the reflectors and a quality factor as high as 15,911±511 for a Fabry-P{\'e}rot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-P{\'e}rot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.",
keywords = "Photonic Integrated Circuits (PIC), photonic crystals, nanophotonics, Q-factor, Photonic integrated circuits, Photonic crystals, Cavity resonators, Silicon, III-V semiconductor materials, Indium phosphide, Optical waveguides",
author = "Sander Reniers and Yuqing Jiao and {van der Tol}, Jos and Kevin Williams and Yi Wang",
year = "2019",
month = "9",
day = "16",
doi = "10.1109/JQE.2019.2941578",
language = "English",
volume = "55",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers",
number = "6",

}

TY - JOUR

T1 - Characterization of waveguide photonic crystal reflectors on indium phosphide membranes

AU - Reniers, Sander

AU - Jiao, Yuqing

AU - van der Tol, Jos

AU - Williams, Kevin

AU - Wang, Yi

PY - 2019/9/16

Y1 - 2019/9/16

N2 - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.

AB - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.

KW - Photonic Integrated Circuits (PIC)

KW - photonic crystals

KW - nanophotonics

KW - Q-factor

KW - Photonic integrated circuits

KW - Photonic crystals

KW - Cavity resonators

KW - Silicon

KW - III-V semiconductor materials

KW - Indium phosphide

KW - Optical waveguides

U2 - 10.1109/JQE.2019.2941578

DO - 10.1109/JQE.2019.2941578

M3 - Article

VL - 55

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 6

M1 - 8839111

ER -