Abstract
| Original language | English |
|---|---|
| Article number | 8839111 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 55 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 16 Sep 2019 |
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Keywords
- Photonic Integrated Circuits (PIC)
- photonic crystals
- nanophotonics
- Q-factor
- Photonic integrated circuits
- Photonic crystals
- Cavity resonators
- Silicon
- III-V semiconductor materials
- Indium phosphide
- Optical waveguides
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Characterization of waveguide photonic crystal reflectors on indium phosphide membranes. / Reniers, Sander (Corresponding author); Jiao, Yuqing; van der Tol, Jos; Williams, Kevin; Wang, Yi.
In: IEEE Journal of Quantum Electronics, Vol. 55, No. 6, 8839111, 16.09.2019.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Characterization of waveguide photonic crystal reflectors on indium phosphide membranes
AU - Reniers, Sander
AU - Jiao, Yuqing
AU - van der Tol, Jos
AU - Williams, Kevin
AU - Wang, Yi
PY - 2019/9/16
Y1 - 2019/9/16
N2 - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.
AB - We present waveguide photonic crystal reflectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the reflectivity of those reflectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg reflector. We show simulations of these reflectors and experimental results of fabricated devices, both showing a high, free-to-choose reflectivity, and high quality factor Fabry-Pérot cavities. We experimentally show reflectivities higher than 95% for the reflectors and a quality factor as high as 15,911±511 for a Fabry-Pérot cavity, using reflectors with a length of only 4 microns. For the first time, to our knowledge, two methods for measuring the reflectivity are used for characterization of on-chip reflectors to accurately determine the reflection. The first method is based on analysis of the transmission through a Fabry-Pérot cavity, the second is based on a direct four-port measurement of the reflector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual reflection coefficient.
KW - Photonic Integrated Circuits (PIC)
KW - photonic crystals
KW - nanophotonics
KW - Q-factor
KW - Photonic integrated circuits
KW - Photonic crystals
KW - Cavity resonators
KW - Silicon
KW - III-V semiconductor materials
KW - Indium phosphide
KW - Optical waveguides
U2 - 10.1109/JQE.2019.2941578
DO - 10.1109/JQE.2019.2941578
M3 - Article
VL - 55
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 6
M1 - 8839111
ER -