Characterization of thermal and electrical stability of MOCVD HfO 2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies

Z.M. Rittersma, J.J.G.P. Loo, Y.V. Ponomarev, M.A. Verheijen, M. Kaiser, F. Roozeboom, S. van Elshocht, M. Caymax

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