Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

I.B. Akca, A. Dana, A. Aydinli, M. Rossetti, L. Li, A. Fiore, N. Dagli

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 µm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependent.
Original languageEnglish
Title of host publication2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, CLEO - IQEC, 17 - 22 June 2007, Munich
Pages4386080-1
DOIs
Publication statusPublished - 2007
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2007 - ICM Center of the New Munich Trade Fair Centre, Munich, Germany
Duration: 17 Jun 200717 Jun 2007
http://2007.cleoeurope.org/

Publication series

NameDigest of technical papers
ISSN (Print)0193-6530

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2007
Abbreviated titleCLEO® 2007
Country/TerritoryGermany
CityMunich
Period17/06/0717/06/07
Internet address

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