Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers

Y. Jiao; P.J. Veldhoven, van; E. Smalbrugge; M.K. Smit; E.A.J.M. Bente

Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers

Y. Jiao, P.J. Veldhoven, van, E. Smalbrugge, M.K. Smit, E.A.J.M. Bente

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Abstract

In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 µm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.

Original language	English
Pages	231-234
Publication status	Published - 2012

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Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 November 2012, Mons, Belgium

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title = "Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers",

abstract = "In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 µm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.",

author = "Y. Jiao and {Veldhoven, van}, P.J. and E. Smalbrugge and M.K. Smit and E.A.J.M. Bente",

note = "Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 November 2012, Mons, Belgium",

year = "2012",

language = "English",

pages = "231--234",

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T1 - Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers

AU - Jiao, Y.

AU - Veldhoven, van, P.J.

AU - Smalbrugge, E.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

N1 - Proceedings of the 17th Annual symposium of the IEEE Photonics Benelux Chapter, 29-30 November 2012, Mons, Belgium

PY - 2012

Y1 - 2012

N2 - In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 µm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.

AB - In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 µm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.

M3 - Poster

SP - 231

EP - 234

ER -

Characterization and modeling of gain spectra of single-layer InAs/InP(100) quantum dot amplifiers

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