Characterisation of the growth of a carbonaceous film on silicon

J.P. Beardmore; A.J. Palmer; C.G.C.H.M. Fabrie; K.A.H. Leeuwen, van; R.T. Sang

doi:10.1016/j.tsf.2011.09.073

Characterisation of the growth of a carbonaceous film on silicon

J.P. Beardmore
, A.J. Palmer
, C.G.C.H.M. Fabrie
, K.A.H. Leeuwen, van
, R.T. Sang

Coherence and Quantum Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems.

Original language	English
Pages (from-to)	2414-2417
Journal	Thin Solid Films
Volume	520
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2011.09.073
Publication status	Published - 2012

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@article{049e514f568f4377b849cf14c7602584,

title = "Characterisation of the growth of a carbonaceous film on silicon",

abstract = "In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems.",

author = "J.P. Beardmore and A.J. Palmer and C.G.C.H.M. Fabrie and \{Leeuwen, van\}, K.A.H. and R.T. Sang",

year = "2012",

doi = "10.1016/j.tsf.2011.09.073",

language = "English",

volume = "520",

pages = "2414--2417",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "7",

}

TY - JOUR

T1 - Characterisation of the growth of a carbonaceous film on silicon

AU - Beardmore, J.P.

AU - Palmer, A.J.

AU - Fabrie, C.G.C.H.M.

AU - Leeuwen, van, K.A.H.

AU - Sang, R.T.

PY - 2012

Y1 - 2012

N2 - In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems.

AB - In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems.

U2 - 10.1016/j.tsf.2011.09.073

DO - 10.1016/j.tsf.2011.09.073

M3 - Article

SN - 0040-6090

VL - 520

SP - 2414

EP - 2417

JO - Thin Solid Films

JF - Thin Solid Films

IS - 7

ER -

Characterisation of the growth of a carbonaceous film on silicon

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