Channel-length-dependent transport behaviors of graphene field-effect transistors

S.-J. Han, Zhihong Chen, A.A. Bol, Y. Sun

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Abstract

This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 µm down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electron-hole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs.
Original languageEnglish
Pages (from-to)812-814
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
Publication statusPublished - 2011

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