Abstract
This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 µm down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electron-hole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac point in graphene devices as a consequence of gate length scaling. The unusual shift of the Dirac point voltage has been identified as one of the signatures of short-channel effects in GFETs.
Original language | English |
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Pages (from-to) | 812-814 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 |