Change in d.c. and 1/f noise characteristics of n-submicron mosfets due to hot-carrier degradation

ÐHot-carrier stress and its in¯uence on d.c. and 1/f noise characteristics in submicron n-chan- nel MOSFETs was investigated. From a 0.5 mm CMOS technology we observed a negative shift in the threshold voltage and a decrease in the drain current. The degradation increases the series resistance on the drain side. In most cases, the relative 1/f noise in the drain current also increases. A degraded device is often found to be noisier in its reverse mode than in its normal mode. The novel material is that the normalized 1/f noise analysis in terms of the 1/f noise parameter a is a more sensitive diagnos- tic tool for hot-carrier degradation in submicron MOSFETs than SI (A2/Hz) and some results are qualitatively explained in terms of mobility ¯uctuations. #