CH4/H2/Ar electron cyclotron resonance plasma etching for GaAs-based field effect transistors

J.G. Hassel, van, C.M. Es, van, P.A.M. Nouwens, J.H. Maahury, L.M.F. Kaufmann

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Abstract

Electron cyclotron resonance (ECR) plasma etch processes with CH4/H2/AR have been investigated on different III–Vsemiconductor materials (GaAs, AlGaAs, InGaAs, and InP). The passivation depth as a function of the GaAs carrierconcentration and the recovery upon annealing at different temperatures have been determined by C-V measurements.Little degradation on the characteristics of Schottky diodes is observed with increasing process biases. If the GaAs toplayer of an AlGaAs/GaAs heterostructure is removed by plasma processing the Hall mobility is restored to 74% afterannealing at 425°C. This is compared to a wet chemically etched reference sample. The 2-DEG sheet density fully recovers.However, if an Si -doped layer is incorporated in the heterostructure the Hall mobility and the sheet density completelyrestore after plasma etching and subsequent annealing. In the experiments minimal damage is observed at a substrate biasof –40 V. The direct current and high frequency characteristics of a dry and wet etched pseudomorphic heterostructurefield-effect transistors are compared.
Original languageEnglish
Pages (from-to)2849-2852
Number of pages4
JournalJournal of the Electrochemical Society
Volume142
Issue number8
DOIs
Publication statusPublished - 1995

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