CBE growth and characterization on InGaAsN/InP quantum well structures using NH3

M. Buda, M.R. Leijs, A.Y. Silov, H. Vonk, J.H. Wolter, C.T. Foxon

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

NH3 is used successfully as nitrogen precursor for the growth of InxGa1-xAs1-yNy / InP structures using Chemical Beam Epitaxy (CBE). In our system one high temperature injector is used for the introduction of NH3 only. The maximum amount of N introduced in InGaAsis 1.4%, estimated from X-ray and PL measurements. The N incorporation is strongly influenced by the temperature of the injector and by compressive strain. Addittionally, the N incorporation is decreased when high strain values give rise to misfit dislocations. Post-growth treatment enhances the photoluminescence intensity of the InFaAsN layers. We conclude that point defects are annihilated by the anneal. Additionally there is evidence for atomic rearrangements caused by the annealing step.
Original languageEnglish
Title of host publicationInt. Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000
Pages433-436
Publication statusPublished - 2000
Eventconference; Int. Workshop on Nitride Semiconductors -
Duration: 1 Jan 2000 → …

Conference

Conferenceconference; Int. Workshop on Nitride Semiconductors
Period1/01/00 → …
OtherInt. Workshop on Nitride Semiconductors

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