CBE growth and characterization on InGaAsN/InP quantum well structures using NH3

M. Buda; M.R. Leijs; A.Y. Silov; H. Vonk; J.H. Wolter; C.T. Foxon

CBE growth and characterization on InGaAsN/InP quantum well structures using NH3

M. Buda, M.R. Leijs, A.Y. Silov, H. Vonk, J.H. Wolter, C.T. Foxon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

NH3 is used successfully as nitrogen precursor for the growth of InxGa1-xAs1-yNy / InP structures using Chemical Beam Epitaxy (CBE). In our system one high temperature injector is used for the introduction of NH3 only. The maximum amount of N introduced in InGaAsis 1.4%, estimated from X-ray and PL measurements. The N incorporation is strongly influenced by the temperature of the injector and by compressive strain. Addittionally, the N incorporation is decreased when high strain values give rise to misfit dislocations. Post-growth treatment enhances the photoluminescence intensity of the InFaAsN layers. We conclude that point defects are annihilated by the anneal. Additionally there is evidence for atomic rearrangements caused by the annealing step.

Original language	English
Title of host publication	Int. Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000
Pages	433-436
Publication status	Published - 2000
Event	conference; Int. Workshop on Nitride Semiconductors - Duration: 1 Jan 2000 → …

Conference

Conference	conference; Int. Workshop on Nitride Semiconductors
Period	1/01/00 → …
Other	Int. Workshop on Nitride Semiconductors

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@inproceedings{920fae180cbb4423899fa9487f209ae6,

title = "CBE growth and characterization on InGaAsN/InP quantum well structures using NH3",

abstract = "NH3 is used successfully as nitrogen precursor for the growth of InxGa1-xAs1-yNy / InP structures using Chemical Beam Epitaxy (CBE). In our system one high temperature injector is used for the introduction of NH3 only. The maximum amount of N introduced in InGaAsis 1.4%, estimated from X-ray and PL measurements. The N incorporation is strongly influenced by the temperature of the injector and by compressive strain. Addittionally, the N incorporation is decreased when high strain values give rise to misfit dislocations. Post-growth treatment enhances the photoluminescence intensity of the InFaAsN layers. We conclude that point defects are annihilated by the anneal. Additionally there is evidence for atomic rearrangements caused by the annealing step.",

author = "M. Buda and M.R. Leijs and A.Y. Silov and H. Vonk and J.H. Wolter and C.T. Foxon",

year = "2000",

language = "English",

pages = "433--436",

booktitle = "Int. Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000",

note = "conference; Int. Workshop on Nitride Semiconductors ; Conference date: 01-01-2000",

}

TY - GEN

T1 - CBE growth and characterization on InGaAsN/InP quantum well structures using NH3

AU - Buda, M.

AU - Leijs, M.R.

AU - Silov, A.Y.

AU - Vonk, H.

AU - Wolter, J.H.

AU - Foxon, C.T.

PY - 2000

Y1 - 2000

N2 - NH3 is used successfully as nitrogen precursor for the growth of InxGa1-xAs1-yNy / InP structures using Chemical Beam Epitaxy (CBE). In our system one high temperature injector is used for the introduction of NH3 only. The maximum amount of N introduced in InGaAsis 1.4%, estimated from X-ray and PL measurements. The N incorporation is strongly influenced by the temperature of the injector and by compressive strain. Addittionally, the N incorporation is decreased when high strain values give rise to misfit dislocations. Post-growth treatment enhances the photoluminescence intensity of the InFaAsN layers. We conclude that point defects are annihilated by the anneal. Additionally there is evidence for atomic rearrangements caused by the annealing step.

AB - NH3 is used successfully as nitrogen precursor for the growth of InxGa1-xAs1-yNy / InP structures using Chemical Beam Epitaxy (CBE). In our system one high temperature injector is used for the introduction of NH3 only. The maximum amount of N introduced in InGaAsis 1.4%, estimated from X-ray and PL measurements. The N incorporation is strongly influenced by the temperature of the injector and by compressive strain. Addittionally, the N incorporation is decreased when high strain values give rise to misfit dislocations. Post-growth treatment enhances the photoluminescence intensity of the InFaAsN layers. We conclude that point defects are annihilated by the anneal. Additionally there is evidence for atomic rearrangements caused by the annealing step.

M3 - Conference contribution

SP - 433

EP - 436

BT - Int. Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000

T2 - conference; Int. Workshop on Nitride Semiconductors

Y2 - 1 January 2000

ER -

CBE growth and characterization on InGaAsN/InP quantum well structures using NH3

Abstract

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