Cavity ring down detection of SiH3 on the broadband à 2A1′ ←X 2A1 transition in a remote Ar–H2–SiH4 plasma

M.G.H. Boogaarts, P.J. Bocker, W.M.M. Kessels, D.C. Schram, M.C.M. Sanden, van de

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24 Citations (Scopus)

Abstract

We report on the use of the cavity ring down (CRD) technique for the detection of the silyl radical SiH/sub 3/ on the broadband A/sup 2/A'/sub 1/ from X/sup 2/A/sub 1/ transition around 215 nm. SiH/sub 3/ has been detected in a remote Ar-H/sub 2/-SiH/sub 4/ plasma during hydrogenated amorphous silicon (a-Si:H) thin film growth. The measurements demonstrate the capability of CRD to measure small broadband absorptions in the deep UV in the hostile environment of a deposition plasma. The SiH/sub 3/ absorption shows an expected dependence on the SiH/sub 4/ precursor flow and correlates well with the a-Si:H growth rate. The observed absorptions correspond with SiH/sub 3/ densities in the range 2-13*10/sup 18/ m/sup -3/, which is at least two orders of magnitude above the estimated SiH/sub 3/ detection limit
Original languageEnglish
Pages (from-to)400-406
JournalChemical Physics Letters
Volume326
Issue number5-6
DOIs
Publication statusPublished - 2000

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