Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stacks

W. Keuning; P. Weijer, van de; H. Lifka; W.M.M. Kessels; M. Creatore

doi:10.1116/1.3664762

Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stacks

W. Keuning, P. Weijer, van de, H. Lifka, W.M.M. Kessels, M. Creatore

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Abstract

Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25¿°C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiNx:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al2O3/a-SiNx:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of =¿2¿×¿10-6 g¿m-2¿day-1 and 4¿×¿10-6 g¿m-2¿day-1 (20¿oC/50% relative humidity) were found for 20–40¿nm Al2O3 and 300¿nm a-SiNx:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al2O3 films compared to the a-SiNx:H films and an average of 0.12 defects per cm2 was obtained for a stack consisting of three barrier layers (Al2O3/a-SiNx:H/Al2O3).

Original language	English
Article number	01A131
Pages (from-to)	01A131-1/6
Number of pages	6
Journal	Journal of Vacuum Science and Technology A
Volume	30
Issue number	1
DOIs	https://doi.org/10.1116/1.3664762
Publication status	Published - 2012

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@article{7f637386fc54415eab918d3e2c9b4d3b,

title = "Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stacks",

abstract = "Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25¿°C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiNx:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al2O3/a-SiNx:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of =¿2¿×¿10-6 g¿m-2¿day-1 and 4¿×¿10-6 g¿m-2¿day-1 (20¿oC/50% relative humidity) were found for 20–40¿nm Al2O3 and 300¿nm a-SiNx:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al2O3 films compared to the a-SiNx:H films and an average of 0.12 defects per cm2 was obtained for a stack consisting of three barrier layers (Al2O3/a-SiNx:H/Al2O3).",

author = "W. Keuning and {Weijer, van de}, P. and H. Lifka and W.M.M. Kessels and M. Creatore",

year = "2012",

doi = "10.1116/1.3664762",

language = "English",

volume = "30",

pages = "01A131--1/6",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stacks

AU - Keuning, W.

AU - Weijer, van de, P.

AU - Lifka, H.

AU - Kessels, W.M.M.

AU - Creatore, M.

PY - 2012

Y1 - 2012

N2 - Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25¿°C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiNx:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al2O3/a-SiNx:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of =¿2¿×¿10-6 g¿m-2¿day-1 and 4¿×¿10-6 g¿m-2¿day-1 (20¿oC/50% relative humidity) were found for 20–40¿nm Al2O3 and 300¿nm a-SiNx:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al2O3 films compared to the a-SiNx:H films and an average of 0.12 defects per cm2 was obtained for a stack consisting of three barrier layers (Al2O3/a-SiNx:H/Al2O3).

AB - Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25¿°C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiNx:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al2O3/a-SiNx:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of =¿2¿×¿10-6 g¿m-2¿day-1 and 4¿×¿10-6 g¿m-2¿day-1 (20¿oC/50% relative humidity) were found for 20–40¿nm Al2O3 and 300¿nm a-SiNx:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al2O3 films compared to the a-SiNx:H films and an average of 0.12 defects per cm2 was obtained for a stack consisting of three barrier layers (Al2O3/a-SiNx:H/Al2O3).

U2 - 10.1116/1.3664762

DO - 10.1116/1.3664762

M3 - Article

SN - 0734-2101

VL - 30

SP - 01A131-1/6

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 1

M1 - 01A131

ER -

Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stacks

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