Carrier tunneling in high magnetic fields

P.C.M. Christianen, I.E.M. Bruggink, J.C. Maan, W.C. Vleuten, van der

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Abstract

Proceedings of the XXIV International School of Semiconducting Coinpounds, Jaszowiec 1995. A magnetic field induced coupling is observed between the Landau levels with different quantum number of two GaAs quantum wells separated by a thin (Ga,Al)As tunnel barrier using magneto-photoluminescence-excitation spectroscopy. This coupling cannot be due to a resonance between single particle energy levels, and therefore an explanation is proposed in terms of the Coulomb interaction of magneto-excitons across the thin barrier.
Original languageEnglish
Pages (from-to)691-694
JournalActa Physica Polonica A
Volume88
Issue number4
Publication statusPublished - 1995

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