Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

W.J.M. Jonge, de; H.J.M. Swagten; R.R. Galazka; P. Warmenbol; J.T. Devreese

doi:10.1109/20.92168

Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

W.J.M. Jonge, de
, H.J.M. Swagten
, R.R. Galazka
, P. Warmenbol
, J.T. Devreese

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

244 Downloads (Pure)

Abstract

Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

Original language	English
Pages (from-to)	2542-2547
Journal	IEEE Transactions on Magnetics
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/20.92168
Publication status	Published - 1988

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title = "Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe",

abstract = "Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005\&les;x\&les;0.1, 0.4\&les;y\&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter",

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T1 - Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

AU - Jonge, de, W.J.M.

AU - Swagten, H.J.M.

AU - Galazka, R.R.

AU - Warmenbol, P.

AU - Devreese, J.T.

PY - 1988

Y1 - 1988

N2 - Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

AB - Low-temperature AC susceptibility and specific heat measurements have been performed to study the influence of the concentration of charge carriers on the ferromagnetic phase transition of Pb1-x-y SnyMnxTe for various compositions (0.005&les;x&les;0.1, 0.4&les;y&les;1.0). A critical carrier density above which a ferromagnetic transition can take place is observed. This behavior is also reflected in the Curie-Weiss temperature T obtained from high-temperature susceptibility data. A simple modified RKKY mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute. The effect of a finite mean free path of the carriers is taken into account. This model gives excellent agreement with the data is obtained without the use of a fitting parameter

U2 - 10.1109/20.92168

DO - 10.1109/20.92168

M3 - Article

SN - 0018-9464

VL - 24

SP - 2542

EP - 2547

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 6

ER -

Carrier induced magnetic interaction in the diluted magnetic semiconductor PbSnMnTe

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