Carrier dynamics in small InAs/GaAs quantum dots

N. Zurauskiene, S. Marcinkevicius, G. Janssen, E. Goovaerts, A. Bouwen, P.M. Koenraad, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Photo-excited carrier dynamics in small InAs/GaAs quantum dots was investigated in the temperature range from 80 up to 230 K by time-resolved photoluminescence. Very long lifetimes (up to 10 ns) are observed in this system at low temperatures and excitation intensities. At low excitation intensity the luminescence peak exhibits a red shift at later times after the excitation. At higher excitation intensities the luminescence peak is blue-shifted, the spectrum broadens and a faster decay is obtained. Photo-excited carrier dynamics is discussed considering different processes related to trapping and thermal escape of the carriers as well as their relaxation and recombination, taking into account confinement effects and the wetting layer as a possible channel for carrier exchange.
Original languageEnglish
Title of host publicationUltrafast phenomena in semiconductors 2001 : proceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors (11-UFPS), held in Vilnius, Lithuania, 27 - 29 August 2001
EditorsC.C. Sorrell
Place of PublicationUetikon-Zuerich
PublisherTrans Tech Publications
Pages31-34
ISBN (Print)0-87849-890-7
DOIs
Publication statusPublished - 2002
Eventconference; International Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29 -
Duration: 1 Jan 2002 → …

Publication series

NameMaterials Science Forum
Volume384-385
ISSN (Print)0255-5476

Conference

Conferenceconference; International Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29
Period1/01/02 → …
OtherInternational Symposium on Ultrafast Phenomena in Semiconductors ; 11 (Vilnius) : 2001.08.27-29

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