Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

A. Fiore, M. Rossetti, B. Alloing, C. Paranthoën, J.X. Chen, L. Geelhaar, H. Riechert

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area
Original languageEnglish
Article number205311
Pages (from-to)205311-1/12
JournalPhysical Review B
Volume70
Issue number20
DOIs
Publication statusPublished - 2004

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