Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

A. Fiore; M. Rossetti; B. Alloing; C. Paranthoën; J.X. Chen; L. Geelhaar; H. Riechert

doi:10.1103/PhysRevB.70.205311

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

A. Fiore, M. Rossetti, B. Alloing, C. Paranthoën, J.X. Chen, L. Geelhaar, H. Riechert

Photonics and Semiconductor Nanophysics

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Abstract

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area

Original language	English
Article number	205311
Pages (from-to)	205311-1/12
Journal	Physical Review B
Volume	70
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.70.205311
Publication status	Published - 2004

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title = "Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots",

abstract = "We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area",

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AU - Fiore, A.

AU - Rossetti, M.

AU - Alloing, B.

AU - Paranthoën, C.

AU - Chen, J.X.

AU - Geelhaar, L.

AU - Riechert, H.

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AB - We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area

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JO - Physical Review B

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Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

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