Carrier-carrier scattering induced capture in quantum well lasers

P.W.M. Blom; J.E.M. Haverkort; P.J. van Hall; J.H. Wolter

doi:10.1063/1.108668

Carrier-carrier scattering induced capture in quantum well lasers

P.W.M. Blom, J.E.M. Haverkort, P.J. van Hall, J.H. Wolter

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

40 Citations (Scopus)

Abstract

We present calculations of the carrier capture efficiency into various types of quantum well lasers. The carrier capture into a quantum well can be due to either optical phonon emission or carrier-carrier scattering. Both capture mechanisms have been calculated and show oscillations as a function of the quantum well thickness. By optimizing the carrier capture efficiency the carrier accumulation in the barrier layers can be reduced, resulting in an improved modulation response and threshold current.

Original language	English
Pages (from-to)	1490-1492
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	13
DOIs	https://doi.org/10.1063/1.108668
Publication status	Published - 1 Dec 1993

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abstract = "We present calculations of the carrier capture efficiency into various types of quantum well lasers. The carrier capture into a quantum well can be due to either optical phonon emission or carrier-carrier scattering. Both capture mechanisms have been calculated and show oscillations as a function of the quantum well thickness. By optimizing the carrier capture efficiency the carrier accumulation in the barrier layers can be reduced, resulting in an improved modulation response and threshold current.",

author = "P.W.M. Blom and J.E.M. Haverkort and {van Hall}, P.J. and J.H. Wolter",

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AU - Wolter, J.H.

PY - 1993/12/1

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N2 - We present calculations of the carrier capture efficiency into various types of quantum well lasers. The carrier capture into a quantum well can be due to either optical phonon emission or carrier-carrier scattering. Both capture mechanisms have been calculated and show oscillations as a function of the quantum well thickness. By optimizing the carrier capture efficiency the carrier accumulation in the barrier layers can be reduced, resulting in an improved modulation response and threshold current.

AB - We present calculations of the carrier capture efficiency into various types of quantum well lasers. The carrier capture into a quantum well can be due to either optical phonon emission or carrier-carrier scattering. Both capture mechanisms have been calculated and show oscillations as a function of the quantum well thickness. By optimizing the carrier capture efficiency the carrier accumulation in the barrier layers can be reduced, resulting in an improved modulation response and threshold current.

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Carrier-carrier scattering induced capture in quantum well lasers

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