Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong; P. Offermans; R. Nöetzel; P. M. Koenraad; J. H. Wolter

doi:10.1109/SIM.2005.1511399

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong, P. Offermans, R. Nöetzel, P. M. Koenraad, J. H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

Original language	English
Title of host publication	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	119-124
Number of pages	6
ISBN (Print)	078038668X, 9780780386686
DOIs	https://doi.org/10.1109/SIM.2005.1511399
Publication status	Published - 1 Dec 2005
Event	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China Duration: 20 Sept 2004 → 25 Sept 2004

Conference

Conference	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Country/Territory	China
City	Beijing
Period	20/09/04 → 25/09/04

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10.1109/SIM.2005.1511399

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Gong, Q., Offermans, P., Nöetzel, R., Koenraad, P. M., & Wolter, J. H. (2005). Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (pp. 119-124). Article 1511399 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SIM.2005.1511399

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title = "Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy",

abstract = "The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.",

author = "Q. Gong and P. Offermans and R. N{\"o}etzel and Koenraad, {P. M.} and Wolter, {J. H.}",

year = "2005",

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Gong, Q, Offermans, P, Nöetzel, R, Koenraad, PM & Wolter, JH 2005, Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. in 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004., 1511399, Institute of Electrical and Electronics Engineers, Piscataway, pp. 119-124, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, China, 20/09/04. https://doi.org/10.1109/SIM.2005.1511399

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. / Gong, Q.; Offermans, P.; Nöetzel, R. et al.
2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004. Piscataway: Institute of Electrical and Electronics Engineers, 2005. p. 119-124 1511399.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

AU - Gong, Q.

AU - Offermans, P.

AU - Nöetzel, R.

AU - Koenraad, P. M.

AU - Wolter, J. H.

PY - 2005/12/1

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N2 - The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

AB - The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

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BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

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Y2 - 20 September 2004 through 25 September 2004

ER -

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

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