Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong, P. Offermans, R. Nöetzel, P. M. Koenraad, J. H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

Original languageEnglish
Title of host publication2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages119-124
Number of pages6
ISBN (Print)078038668X, 9780780386686
DOIs
Publication statusPublished - 1 Dec 2005
Event2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duration: 20 Sep 200425 Sep 2004

Conference

Conference2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period20/09/0425/09/04

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