Capacitance-voltage characteristics of organic thin-film transistors

G. H. Gelinck, Erik Van Veenendaal, H. Van Der Vegte, R. Coehoorn

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

We have fabricated pentacene-based thin film field-effect transistors and analyzed quasi-static current and capacitance measurements as a function of gate bias. The latter provides an independent and accurate estimation of the threshold voltage, an important device parameter that cannot be extracted unambiguously from the I-V measurements. The C-V characteristics of the transistors were furthermore characterized using impedance spectroscopy as a function of frequency and gate bias for the zero drain bias case. We model the impedance data with a simple transmission line equivalent circuit and find that the frequency dependence of the capacitance and phase can be described adequately from the channel conductance, as determined from quasi static current-voltage measurements, and the geometrical values of the channel and source/drain to gate electrode overlap capacitances.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VI
PublisherSPIE
Number of pages9
ISBN (Print)9780819468062
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: 26 Aug 200728 Aug 2007

Publication series

NameProceedings of SPIE
Volume6658

Conference

ConferenceOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA
Period26/08/0728/08/07

Keywords

  • Capacitance
  • Capacitance-voltage (C-V)
  • Characterization
  • Field-effect mobility
  • Organic field-effect transistors (OFETs)
  • Organic transistor
  • Parameter extraction
  • Pentacene

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  • Cite this

    Gelinck, G. H., Van Veenendaal, E., Van Der Vegte, H., & Coehoorn, R. (2007). Capacitance-voltage characteristics of organic thin-film transistors. In Organic Field-Effect Transistors VI [665802] (Proceedings of SPIE; Vol. 6658). SPIE. https://doi.org/10.1117/12.737252