Capacitance modeling of laterally non-uniform MOS devices

A.C.T. Aarts; R. van der Hout; J.C.J. Paasschens; Andries J. Scholten; M. Willemsen; D.B.M. Klaassen

doi:10.1109/IEDM.2004.1419281

Capacitance modeling of laterally non-uniform MOS devices

A.C.T. Aarts, R. van der Hout, J.C.J. Paasschens, Andries J. Scholten, M. Willemsen, D.B.M. Klaassen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

19 Citations (Scopus)

Abstract

In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.

Original language	English
Title of host publication	IEDM Technical Digest (IEEE International Electron Devices Meeting 2004
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	751-754
Number of pages	4
ISBN (Print)	0-7803-8684-1
DOIs	https://doi.org/10.1109/IEDM.2004.1419281
Publication status	Published - 2004
Externally published	Yes
Event	2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States Duration: 13 Dec 2004 → 15 Dec 2004

Conference

Conference	2004 IEEE International Electron Devices Meeting, IEDM 2004
Country/Territory	United States
City	San Francisco
Period	13/12/04 → 15/12/04

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10.1109/IEDM.2004.1419281

Cite this

@inproceedings{1341fb2a9d4146ad9bade6068e1b5e50,

title = "Capacitance modeling of laterally non-uniform MOS devices",

abstract = "In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.",

author = "A.C.T. Aarts and {van der Hout}, R. and J.C.J. Paasschens and Scholten, {Andries J.} and M. Willemsen and D.B.M. Klaassen",

year = "2004",

doi = "10.1109/IEDM.2004.1419281",

language = "English",

isbn = "0-7803-8684-1",

pages = "751--754",

booktitle = "IEDM Technical Digest (IEEE International Electron Devices Meeting 2004",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2004 IEEE International Electron Devices Meeting, IEDM 2004 ; Conference date: 13-12-2004 Through 15-12-2004",

}

Aarts, ACT, van der Hout, R, Paasschens, JCJ, Scholten, AJ, Willemsen, M & Klaassen, DBM 2004, Capacitance modeling of laterally non-uniform MOS devices. in IEDM Technical Digest (IEEE International Electron Devices Meeting 2004. Institute of Electrical and Electronics Engineers, Piscataway, pp. 751-754, 2004 IEEE International Electron Devices Meeting, IEDM 2004, San Francisco, California, United States, 13/12/04. https://doi.org/10.1109/IEDM.2004.1419281

Capacitance modeling of laterally non-uniform MOS devices. / Aarts, A.C.T.; van der Hout, R.; Paasschens, J.C.J. et al.
IEDM Technical Digest (IEEE International Electron Devices Meeting 2004. Piscataway: Institute of Electrical and Electronics Engineers, 2004. p. 751-754.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Capacitance modeling of laterally non-uniform MOS devices

AU - Aarts, A.C.T.

AU - van der Hout, R.

AU - Paasschens, J.C.J.

AU - Scholten, Andries J.

AU - Willemsen, M.

AU - Klaassen, D.B.M.

PY - 2004

Y1 - 2004

N2 - In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.

AB - In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.

U2 - 10.1109/IEDM.2004.1419281

DO - 10.1109/IEDM.2004.1419281

M3 - Conference contribution

SN - 0-7803-8684-1

SP - 751

EP - 754

BT - IEDM Technical Digest (IEEE International Electron Devices Meeting 2004

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2004 IEEE International Electron Devices Meeting, IEDM 2004

Y2 - 13 December 2004 through 15 December 2004

ER -

Capacitance modeling of laterally non-uniform MOS devices

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