Capacitance modeling of laterally non-uniform MOS devices

A.C.T. Aarts, R. van der Hout, J.C.J. Paasschens, Andries J. Scholten, M. Willemsen, D.B.M. Klaassen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

19 Citations (Scopus)


In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models.
Original languageEnglish
Title of host publicationIEDM Technical Digest (IEEE International Electron Devices Meeting 2004
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Print)0-7803-8684-1
Publication statusPublished - 2004
Externally publishedYes
Event2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States
Duration: 13 Dec 200415 Dec 2004


Conference2004 IEEE International Electron Devices Meeting, IEDM 2004
Country/TerritoryUnited States
CitySan Francisco


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