C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

Bram Hoex; Michel Bosman; Naomi Nandakumar; W.M.M. Kessels

doi:10.1109/PVSC.2013.6745164

C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

Bram Hoex, Michel Bosman, Naomi Nandakumar, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

In this work the mechanism of c-Si surface passivation by Al ₂O₃ films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al₂O₃ films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al₂O₃ interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al₂O₃.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers
Pages	3333-3336
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6745164
Publication status	Published - 1 Jan 2013
Event	39th IEEE Photovoltaic Specialists Conference (PVSC 2013) - Tampa Convention Center , Tampa, United States Duration: 16 Jun 2013 → 21 Jun 2013 Conference number: 39 https://www.ieee-pvsc.org/PVSC39/

Conference

Conference	39th IEEE Photovoltaic Specialists Conference (PVSC 2013)
Abbreviated title	PVSC 2013
Country/Territory	United States
City	Tampa
Period	16/06/13 → 21/06/13
Internet address	https://www.ieee-pvsc.org/PVSC39/

Keywords

Aluminum oxide
Electron energy loss spectroscopy
Fixed charge
Surface passivation

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10.1109/PVSC.2013.6745164

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title = "C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy",

abstract = "In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3.",

keywords = "Aluminum oxide, Electron energy loss spectroscopy, Fixed charge, Surface passivation",

author = "Bram Hoex and Michel Bosman and Naomi Nandakumar and W.M.M. Kessels",

year = "2013",

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doi = "10.1109/PVSC.2013.6745164",

language = "English",

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pages = "3333--3336",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference (PVSC 2013), PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

url = "https://www.ieee-pvsc.org/PVSC39/",

}

Hoex, B, Bosman, M, Nandakumar, N & Kessels, WMM 2013, C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745164, Institute of Electrical and Electronics Engineers, pp. 3333-3336, 39th IEEE Photovoltaic Specialists Conference (PVSC 2013), Tampa, Florida, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6745164

C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy. / Hoex, Bram; Bosman, Michel; Nandakumar, Naomi et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers, 2013. p. 3333-3336 6745164.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

AU - Hoex, Bram

AU - Bosman, Michel

AU - Nandakumar, Naomi

AU - Kessels, W.M.M.

N1 - Conference code: 39

PY - 2013/1/1

Y1 - 2013/1/1

N2 - In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3.

AB - In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3.

KW - Aluminum oxide

KW - Electron energy loss spectroscopy

KW - Fixed charge

KW - Surface passivation

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U2 - 10.1109/PVSC.2013.6745164

DO - 10.1109/PVSC.2013.6745164

M3 - Conference contribution

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SN - 9781479932993

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EP - 3336

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers

T2 - 39th IEEE Photovoltaic Specialists Conference (PVSC 2013)

Y2 - 16 June 2013 through 21 June 2013

ER -

C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

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Keywords

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