C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopy

Bram Hoex, Michel Bosman, Naomi Nandakumar, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)


In this work the mechanism of c-Si surface passivation by Al 2O3 films is studied in detail by means of spatially resolved electron energy loss spectroscopy (EELS). The bonding configuration of Al and O is studied in as-deposited and annealed Al2O3 films grown on c-Si substrates by plasma-assisted and thermal atomic layer deposition (ALD). The ratio of tetrahedrally and octahedrally coordinated Al is found to increase after annealing, especially for the plasmaassisted ALD sample. The increase is strongest close to the c-Si/Al2O3 interface and thus these results strongly support tetrahedrally coordinated Al as the origin for the negative fixed charge in Al2O3.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Print)9781479932993
Publication statusPublished - 1 Jan 2013
Event39th IEEE Photovoltaic Specialists Conference (PVSC 2013) - Tampa Convention Center , Tampa, United States
Duration: 16 Jun 201321 Jun 2013
Conference number: 39


Conference39th IEEE Photovoltaic Specialists Conference (PVSC 2013)
Abbreviated titlePVSC 2013
Country/TerritoryUnited States
Internet address


  • Aluminum oxide
  • Electron energy loss spectroscopy
  • Fixed charge
  • Surface passivation


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