Skip to main navigation Skip to search Skip to main content

C and L band 1×12 AWG based on 3-μm SOI platform with 100 GHz channel spacing and low polarization sensitivity

  • Yu Wang
  • , Bhat Srivathsa
  • , Netsanet Tessema
  • , Rafael Kraemer
  • , Bitao Pan
  • , Antonio Napoli
  • , Giovanni Delrosso
  • , Nicola Calabretta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Downloads (Pure)

Abstract

C- and L-band polarization insensitive 1×12 AWG with 100GHz channel-spacing is fabricated on SOI. Results show <3.8dB loss, <-30dB crosstalk, <2.6dB polarization dependent loss, <0.1nm polarization dependent wavelength shift and <0.3dB BER penalty at 10Gbps.
Original languageEnglish
Title of host publication2021 Conference on Lasers and Electro-Optics (CLEO)
PublisherInstitute of Electrical and Electronics Engineers
ChapterSW4E.7
Number of pages2
ISBN (Electronic)978-1-943580-91-0
Publication statusPublished - 29 Oct 2021
Event2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, Virtual, Online, United States
Duration: 9 May 202114 May 2021

Conference

Conference2021 Conference on Lasers and Electro-Optics, CLEO 2021
Abbreviated titleCLEO AT 2021
Country/TerritoryUnited States
CityVirtual, Online
Period9/05/2114/05/21

Fingerprint

Dive into the research topics of 'C and L band 1×12 AWG based on 3-μm SOI platform with 100 GHz channel spacing and low polarization sensitivity'. Together they form a unique fingerprint.

Cite this