C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity

Yu Wang, Bhat Srivathsa, Netsanet Tessema, Rafael Kraemer, Bitao Pan, Antonio Napoli, Giovanni Delrosso, Nicola Calabretta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

Abstract

C-and L-band polarization insensitive 1×12 AWG with 100GHz channel-spacing is fabricated on SOI. Results show <3.8dB loss, <-30dB crosstalk, <2.6dB polarization dependent loss, <0.1nm polarization dependent wavelength shift and <0.3dB BER penalty at 10Gbps.

Original languageEnglish
Title of host publication2021 Conference on Lasers and Electro-Optics, CLEO 2021
Subtitle of host publicationProceedings
PublisherInstitute of Electrical and Electronics Engineers
ChapterSW4E.7
Number of pages2
ISBN (Electronic)978-1-943580-91-0
Publication statusPublished - 29 Oct 2021
Event2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, Virtual, Online, United States
Duration: 9 May 202114 May 2021

Conference

Conference2021 Conference on Lasers and Electro-Optics, CLEO 2021
Abbreviated titleCLEO AT 2021
Country/TerritoryUnited States
CityVirtual, Online
Period9/05/2114/05/21

Funding

This project was partially funded from the European Union’s Horizon 2020 research and innovation programme Marie Skłodowska-Curie (GA 814276), and partially from European Union's Horizon 2020 PASSION (GA 780326).

FundersFunder number
European Union's Horizon 2020 - Research and Innovation Framework ProgrammeGA 780326
Marie Skłodowska‐Curie
Marie Skłodowska‐CurieGA 814276

    Fingerprint

    Dive into the research topics of 'C and L band 1×12 AWG based on 3-µm SOI platform with 100 GHz channel spacing and low polarization sensitivity'. Together they form a unique fingerprint.

    Cite this