Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

Y. Barbarin; E.A.J.M. Bente; T. Vries, de; J.H. Besten, den; P.J. Veldhoven, van; M.J.H. Sander -  Jochem; E. Smalbrugge; F.W.M. Otten, van; E.J. Geluk; M.J.R. Heck; X.J.M. Leijtens; J.J.G.M. Tol, van der; F. Karouta; Y.S. Oei; R. Nötzel; M.K. Smit

Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

Y. Barbarin, E.A.J.M. Bente, T. Vries, de, J.H. Besten, den, P.J. Veldhoven, van, M.J.H. Sander - Jochem, E. Smalbrugge, F.W.M. Otten, van, E.J. Geluk, M.J.R. Heck, X.J.M. Leijtens, J.J.G.M. Tol, van der, F. Karouta, Y.S. Oei, R. Nötzel, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

Original language	English
Title of host publication	Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
Editors	P. Mégret, M. Wuilpart, S. Bette, N. Staquet
Place of Publication	Mons
Publisher	IEEE/LEOS
Pages	89-93
ISBN (Print)	2-9600226-4-5
Publication status	Published - 2005
Event	10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium Duration: 1 Dec 2005 → 2 Dec 2005

Conference

Conference	10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
Country/Territory	Belgium
City	Mons
Period	1/12/05 → 2/12/05

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Barbarin, Y., Bente, E. A. J. M., Vries, de, T., Besten, den, J. H., Veldhoven, van, P. J., Sander - Jochem, M. J. H., Smalbrugge, E., Otten, van, F. W. M., Geluk, E. J., Heck, M. J. R., Leijtens, X. J. M., Tol, van der, J. J. G. M., Karouta, F., Oei, Y. S., Nötzel, R., & Smit, M. K. (2005). Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In P. Mégret, M. Wuilpart, S. Bette, & N. Staquet (Eds.), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium (pp. 89-93). IEEE/LEOS.

Barbarin, Y. ; Bente, E.A.J.M. ; Vries, de, T. ; Besten, den, J.H. ; Veldhoven, van, P.J. ; Sander - Jochem, M.J.H. ; Smalbrugge, E. ; Otten, van, F.W.M. ; Geluk, E.J. ; Heck, M.J.R. ; Leijtens, X.J.M. ; Tol, van der, J.J.G.M. ; Karouta, F. ; Oei, Y.S. ; Nötzel, R. ; Smit, M.K. / Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. editor / P. Mégret ; M. Wuilpart ; S. Bette ; N. Staquet. Mons : IEEE/LEOS, 2005. pp. 89-93

@inproceedings{e7d369f4d7e14eea9cabc442e2329909,

title = "Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss",

abstract = "In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-P{\'e}rot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.",

author = "Y. Barbarin and E.A.J.M. Bente and {Vries, de}, T. and {Besten, den}, J.H. and {Veldhoven, van}, P.J. and {Sander - Jochem}, M.J.H. and E. Smalbrugge and {Otten, van}, F.W.M. and E.J. Geluk and M.J.R. Heck and X.J.M. Leijtens and {Tol, van der}, J.J.G.M. and F. Karouta and Y.S. Oei and R. N{\"o}tzel and M.K. Smit",

year = "2005",

language = "English",

isbn = "2-9600226-4-5",

pages = "89--93",

editor = "P. M{\'e}gret and M. Wuilpart and S. Bette and N. Staquet",

booktitle = "Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium",

publisher = "IEEE/LEOS",

note = "10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium ; Conference date: 01-12-2005 Through 02-12-2005",

}

Barbarin, Y, Bente, EAJM, Vries, de, T, Besten, den, JH, Veldhoven, van, PJ, Sander - Jochem, MJH, Smalbrugge, E, Otten, van, FWM, Geluk, EJ, Heck, MJR , Leijtens, XJM , Tol, van der, JJGM, Karouta, F, Oei, YS, Nötzel, R & Smit, MK 2005, Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. in P Mégret, M Wuilpart, S Bette & N Staquet (eds), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. IEEE/LEOS, Mons, pp. 89-93, 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium, Mons, Belgium, 1/12/05.

Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. / Barbarin, Y.; Bente, E.A.J.M.; Vries, de, T.; Besten, den, J.H.; Veldhoven, van, P.J.; Sander - Jochem, M.J.H.; Smalbrugge, E.; Otten, van, F.W.M.; Geluk, E.J.; Heck, M.J.R.; Leijtens, X.J.M.; Tol, van der, J.J.G.M.; Karouta, F.; Oei, Y.S.; Nötzel, R.; Smit, M.K.

Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. ed. / P. Mégret; M. Wuilpart; S. Bette; N. Staquet. Mons : IEEE/LEOS, 2005. p. 89-93.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

AU - Barbarin, Y.

AU - Bente, E.A.J.M.

AU - Vries, de, T.

AU - Besten, den, J.H.

AU - Veldhoven, van, P.J.

AU - Sander - Jochem, M.J.H.

AU - Smalbrugge, E.

AU - Otten, van, F.W.M.

AU - Geluk, E.J.

AU - Heck, M.J.R.

AU - Leijtens, X.J.M.

AU - Tol, van der, J.J.G.M.

AU - Karouta, F.

AU - Oei, Y.S.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2005

Y1 - 2005

N2 - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

AB - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

M3 - Conference contribution

SN - 2-9600226-4-5

SP - 89

EP - 93

BT - Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium

A2 - Mégret, P.

A2 - Wuilpart, M.

A2 - Bette, S.

A2 - Staquet, N.

PB - IEEE/LEOS

CY - Mons

T2 - 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium

Y2 - 1 December 2005 through 2 December 2005

ER -

Barbarin Y, Bente EAJM, Vries, de T, Besten, den JH, Veldhoven, van PJ, Sander - Jochem MJH et al. Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In Mégret P, Wuilpart M, Bette S, Staquet N, editors, Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. Mons: IEEE/LEOS. 2005. p. 89-93

Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

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