Abstract
In this paper we report on the observation of reflection values <-50dB at activepassive
butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at
passive-passive butt-joint interfaces. A three step growth process has been developed
using MOVPE with all metal-organic precursors. In the first epitaxy step, the active
layer stack is grown up to 200 nm above the index guiding layer. The passive regions
are etched using a SiNx mask, afterwards those regions are re-grown up to the top of
the active regions. Finally the SiNx mask is removed and the top cladding is grown. We
have investigated the minimization of the butt-joint reflection by crossing the interface
at different angles. Measurements showed that the butt-joint reflection is below -50dB
for angles above 12 degrees.
Original language | English |
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Title of host publication | Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium |
Editors | P. Mégret, M. Wuilpart, S. Bette, N. Staquet |
Place of Publication | Mons |
Publisher | IEEE/LEOS |
Pages | 89-93 |
ISBN (Print) | 2-9600226-4-5 |
Publication status | Published - 2005 |
Event | 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium Duration: 1 Dec 2005 → 2 Dec 2005 |
Conference
Conference | 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium |
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Country/Territory | Belgium |
City | Mons |
Period | 1/12/05 → 2/12/05 |