Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

Y. Barbarin, E.A.J.M. Bente, T. Vries, de, J.H. Besten, den, P.J. Veldhoven, van, M.J.H. Sander - Jochem, E. Smalbrugge, F.W.M. Otten, van, E.J. Geluk, M.J.R. Heck, X.J.M. Leijtens, J.J.G.M. Tol, van der, F. Karouta, Y.S. Oei, R. Nötzel, M.K. Smit

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Abstract

In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.
Original languageEnglish
Title of host publicationProceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
EditorsP. Mégret, M. Wuilpart, S. Bette, N. Staquet
Place of PublicationMons
PublisherIEEE/LEOS
Pages89-93
ISBN (Print)2-9600226-4-5
Publication statusPublished - 2005
Event10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium
Duration: 1 Dec 20052 Dec 2005

Conference

Conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
CountryBelgium
CityMons
Period1/12/052/12/05

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