Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

Y. Barbarin, E.A.J.M. Bente, T. Vries, de, J.H. Besten, den, P.J. Veldhoven, van, M.J.H. Sander - Jochem, E. Smalbrugge, F.W.M. Otten, van, E.J. Geluk, M.J.R. Heck, X.J.M. Leijtens, J.J.G.M. Tol, van der, F. Karouta, Y.S. Oei, R. Nötzel, M.K. Smit

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Abstract

In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.
Original languageEnglish
Title of host publicationProceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
EditorsP. Mégret, M. Wuilpart, S. Bette, N. Staquet
Place of PublicationMons
PublisherIEEE/LEOS
Pages89-93
ISBN (Print)2-9600226-4-5
Publication statusPublished - 2005
Event10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, Belgium
Duration: 1 Dec 20052 Dec 2005

Conference

Conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
CountryBelgium
CityMons
Period1/12/052/12/05

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butt joints
waveguides
reflectance
masks
epitaxy
cavities
optimization
metals
lasers

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Barbarin, Y., Bente, E. A. J. M., Vries, de, T., Besten, den, J. H., Veldhoven, van, P. J., Sander - Jochem, M. J. H., ... Smit, M. K. (2005). Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In P. Mégret, M. Wuilpart, S. Bette, & N. Staquet (Eds.), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium (pp. 89-93). Mons: IEEE/LEOS.
Barbarin, Y. ; Bente, E.A.J.M. ; Vries, de, T. ; Besten, den, J.H. ; Veldhoven, van, P.J. ; Sander - Jochem, M.J.H. ; Smalbrugge, E. ; Otten, van, F.W.M. ; Geluk, E.J. ; Heck, M.J.R. ; Leijtens, X.J.M. ; Tol, van der, J.J.G.M. ; Karouta, F. ; Oei, Y.S. ; Nötzel, R. ; Smit, M.K. / Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. editor / P. Mégret ; M. Wuilpart ; S. Bette ; N. Staquet. Mons : IEEE/LEOS, 2005. pp. 89-93
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title = "Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss",
abstract = "In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-P{\'e}rot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.",
author = "Y. Barbarin and E.A.J.M. Bente and {Vries, de}, T. and {Besten, den}, J.H. and {Veldhoven, van}, P.J. and {Sander - Jochem}, M.J.H. and E. Smalbrugge and {Otten, van}, F.W.M. and E.J. Geluk and M.J.R. Heck and X.J.M. Leijtens and {Tol, van der}, J.J.G.M. and F. Karouta and Y.S. Oei and R. N{\"o}tzel and M.K. Smit",
year = "2005",
language = "English",
isbn = "2-9600226-4-5",
pages = "89--93",
editor = "P. M{\'e}gret and M. Wuilpart and S. Bette and N. Staquet",
booktitle = "Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium",
publisher = "IEEE/LEOS",

}

Barbarin, Y, Bente, EAJM, Vries, de, T, Besten, den, JH, Veldhoven, van, PJ, Sander - Jochem, MJH, Smalbrugge, E, Otten, van, FWM, Geluk, EJ, Heck, MJR, Leijtens, XJM, Tol, van der, JJGM, Karouta, F, Oei, YS, Nötzel, R & Smit, MK 2005, Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. in P Mégret, M Wuilpart, S Bette & N Staquet (eds), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. IEEE/LEOS, Mons, pp. 89-93, 10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium, Mons, Belgium, 1/12/05.

Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. / Barbarin, Y.; Bente, E.A.J.M.; Vries, de, T.; Besten, den, J.H.; Veldhoven, van, P.J.; Sander - Jochem, M.J.H.; Smalbrugge, E.; Otten, van, F.W.M.; Geluk, E.J.; Heck, M.J.R.; Leijtens, X.J.M.; Tol, van der, J.J.G.M.; Karouta, F.; Oei, Y.S.; Nötzel, R.; Smit, M.K.

Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. ed. / P. Mégret; M. Wuilpart; S. Bette; N. Staquet. Mons : IEEE/LEOS, 2005. p. 89-93.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

AU - Barbarin, Y.

AU - Bente, E.A.J.M.

AU - Vries, de, T.

AU - Besten, den, J.H.

AU - Veldhoven, van, P.J.

AU - Sander - Jochem, M.J.H.

AU - Smalbrugge, E.

AU - Otten, van, F.W.M.

AU - Geluk, E.J.

AU - Heck, M.J.R.

AU - Leijtens, X.J.M.

AU - Tol, van der, J.J.G.M.

AU - Karouta, F.

AU - Oei, Y.S.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2005

Y1 - 2005

N2 - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

AB - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

M3 - Conference contribution

SN - 2-9600226-4-5

SP - 89

EP - 93

BT - Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium

A2 - Mégret, P.

A2 - Wuilpart, M.

A2 - Bette, S.

A2 - Staquet, N.

PB - IEEE/LEOS

CY - Mons

ER -

Barbarin Y, Bente EAJM, Vries, de T, Besten, den JH, Veldhoven, van PJ, Sander - Jochem MJH et al. Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In Mégret P, Wuilpart M, Bette S, Staquet N, editors, Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. Mons: IEEE/LEOS. 2005. p. 89-93