Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

H. Wang; J. Yuan; S. Anantathanasarn; P.J. Veldhoven, van; T. Vries, de; E. Smalbrugge; E.J. Geluk; E.A.J.M. Bente; Y.S. Oei; M.K. Smit; R. Nötzel

Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

H. Wang, J. Yuan, S. Anantathanasarn, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, R. Nötzel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

Original language	English
Title of host publication	ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers
Editors	X.J.M. Leijtens
Place of Publication	Eindhoven, Netherlands
Publisher	Technische Universiteit Eindhoven
Pages	55-58
Number of pages	4
ISBN (Print)	978-90-386-1317-8
Publication status	Published - 2008
Event	14th European Conference on Integrated Optics (ECIO 2008) - Eindhoven, Netherlands Duration: 11 Jun 2008 → 13 Jun 2008 Conference number: 14

Conference

Conference	14th European Conference on Integrated Optics (ECIO 2008)
Abbreviated title	ECIO 2008
Country/Territory	Netherlands
City	Eindhoven
Period	11/06/08 → 13/06/08
Other

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Wang, H., Yuan, J., Anantathanasarn, S., Veldhoven, van, P. J., Vries, de, T., Smalbrugge, E., Geluk, E. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., & Nötzel, R. (2008). Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. In X. J. M. Leijtens (Ed.), ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers (pp. 55-58). Article WeC3 Technische Universiteit Eindhoven.

Wang, H. ; Yuan, J. ; Anantathanasarn, S. et al. / Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. editor / X.J.M. Leijtens. Eindhoven, Netherlands : Technische Universiteit Eindhoven, 2008. pp. 55-58

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title = "Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm",

abstract = "Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-P{\'e}rot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.",

author = "H. Wang and J. Yuan and S. Anantathanasarn and {Veldhoven, van}, P.J. and {Vries, de}, T. and E. Smalbrugge and E.J. Geluk and E.A.J.M. Bente and Y.S. Oei and M.K. Smit and R. N{\"o}tzel",

year = "2008",

language = "English",

isbn = "978-90-386-1317-8",

pages = "55--58",

editor = "X.J.M. Leijtens",

booktitle = "ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers",

publisher = "Technische Universiteit Eindhoven",

note = "14th European Conference on Integrated Optics (ECIO 2008), ECIO 2008 ; Conference date: 11-06-2008 Through 13-06-2008",

}

Wang, H, Yuan, J, Anantathanasarn, S, Veldhoven, van, PJ, Vries, de, T, Smalbrugge, E, Geluk, EJ, Bente, EAJM, Oei, YS, Smit, MK & Nötzel, R 2008, Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. in XJM Leijtens (ed.), ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers., WeC3, Technische Universiteit Eindhoven, Eindhoven, Netherlands, pp. 55-58, 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, Netherlands, 11/06/08.

Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. / Wang, H.; Yuan, J.; Anantathanasarn, S. et al.
ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. ed. / X.J.M. Leijtens. Eindhoven, Netherlands: Technische Universiteit Eindhoven, 2008. p. 55-58 WeC3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

AU - Wang, H.

AU - Yuan, J.

AU - Anantathanasarn, S.

AU - Veldhoven, van, P.J.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Geluk, E.J.

AU - Bente, E.A.J.M.

AU - Oei, Y.S.

AU - Smit, M.K.

AU - Nötzel, R.

N1 - Conference code: 14

PY - 2008

Y1 - 2008

N2 - Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

AB - Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

UR - http://www.scopus.com/inward/record.url?scp=58149136980&partnerID=8YFLogxK

M3 - Conference contribution

SN - 978-90-386-1317-8

SP - 55

EP - 58

BT - ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers

A2 - Leijtens, X.J.M.

PB - Technische Universiteit Eindhoven

CY - Eindhoven, Netherlands

T2 - 14th European Conference on Integrated Optics (ECIO 2008)

Y2 - 11 June 2008 through 13 June 2008

ER -

Wang H, Yuan J, Anantathanasarn S, Veldhoven, van PJ, Vries, de T, Smalbrugge E et al. Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. In Leijtens XJM, editor, ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. Eindhoven, Netherlands: Technische Universiteit Eindhoven. 2008. p. 55-58. WeC3

Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

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