Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

H. Wang, J. Yuan, S. Anantathanasarn, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, R. Nötzel

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Abstract

Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

Original languageEnglish
Title of host publicationECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers
EditorsX.J.M. Leijtens
Place of PublicationEindhoven, Netherlands
PublisherTechnische Universiteit Eindhoven
Pages55-58
Number of pages4
ISBN (Print)978-90-386-1317-8
Publication statusPublished - 2008
Event14th European Conference on Integrated Optics (ECIO 2008) - Eindhoven, Netherlands
Duration: 11 Jun 200813 Jun 2008
Conference number: 14

Conference

Conference14th European Conference on Integrated Optics (ECIO 2008)
Abbreviated titleECIO 2008
CountryNetherlands
CityEindhoven
Period11/06/0813/06/08
Other

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