Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

H. Wang; J. Yuan; P.J. Veldhoven, van; T. Vries, de; E. Smalbrugge; E.J. Geluk; E.A.J.M. Bente; Y.S. Oei; M.K. Smit; S. Anantathanasarn; R. Nötzel

doi:10.1049/el:20083666

Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

H. Wang, J. Yuan, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, S. Anantathanasarn, R. Nötzel

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Abstract

The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB.

Original language	English
Pages (from-to)	522-523
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	8
DOIs	https://doi.org/10.1049/el:20083666
Publication status	Published - 2008

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@article{26c2b04c744b4d4781cc0449e1ec0939,

title = "Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm",

abstract = "The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB.",

author = "H. Wang and J. Yuan and {Veldhoven, van}, P.J. and {Vries, de}, T. and E. Smalbrugge and E.J. Geluk and E.A.J.M. Bente and Y.S. Oei and M.K. Smit and S. Anantathanasarn and R. N{\"o}tzel",

year = "2008",

doi = "10.1049/el:20083666",

language = "English",

volume = "44",

pages = "522--523",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology (IET)",

number = "8",

}

TY - JOUR

T1 - Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

AU - Wang, H.

AU - Yuan, J.

AU - Veldhoven, van, P.J.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Geluk, E.J.

AU - Bente, E.A.J.M.

AU - Oei, Y.S.

AU - Smit, M.K.

AU - Anantathanasarn, S.

AU - Nötzel, R.

PY - 2008

Y1 - 2008

N2 - The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB.

AB - The first butt joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Perot laser emitting around 1.55 mum is demonstrated. Continuous wave lasing at room temperature on the QD ground state transition is achieved. The threshold current is comparable to that of all-active QD lasers. The Butt joint reflectivity for straight waveguides is below -40 dB.

U2 - 10.1049/el:20083666

DO - 10.1049/el:20083666

M3 - Article

SN - 0013-5194

VL - 44

SP - 522

EP - 523

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

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