Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

J. Hong; W.M.M. Kessels; F.J.H. Assche, van; H.C. Rieffe; W.J. Soppe; A.W. Weeber; M.C.M. Sanden, van de

doi:10.1002/pip.468

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

J. Hong, W.M.M. Kessels, F.J.H. Assche, van, H.C. Rieffe, W.J. Soppe, A.W. Weeber, M.C.M. Sanden, van de

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Abstract

Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.

Original language	English
Pages (from-to)	125-130
Journal	Progress in Photovoltaics: Research and Applications
Volume	11
Issue number	2
DOIs	https://doi.org/10.1002/pip.468
Publication status	Published - 2003

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title = "Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films",

abstract = "Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.",

author = "J. Hong and W.M.M. Kessels and {Assche, van}, F.J.H. and H.C. Rieffe and W.J. Soppe and A.W. Weeber and {Sanden, van de}, M.C.M.",

year = "2003",

doi = "10.1002/pip.468",

language = "English",

volume = "11",

pages = "125--130",

journal = "Progress in Photovoltaics: Research and Applications",

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TY - JOUR

T1 - Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

AU - Hong, J.

AU - Kessels, W.M.M.

AU - Assche, van, F.J.H.

AU - Rieffe, H.C.

AU - Soppe, W.J.

AU - Weeber, A.W.

AU - Sanden, van de, M.C.M.

PY - 2003

Y1 - 2003

N2 - Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.

AB - Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.

U2 - 10.1002/pip.468

DO - 10.1002/pip.468

M3 - Article

SN - 1062-7995

VL - 11

SP - 125

EP - 130

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 2

ER -

Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

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