Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (>1 nm/s) silicon nitride films

J. Hong, W.M.M. Kessels, F.J.H. Assche, van, H.C. Rieffe, W.J. Soppe, A.W. Weeber, M.C.M. Sanden, van de

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Abstract

Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.
Original languageEnglish
Pages (from-to)125-130
JournalProgress in Photovoltaics: Research and Applications
Volume11
Issue number2
DOIs
Publication statusPublished - 2003

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