Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti-reflection coatings for multicrystalline silicon (mc-Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing-through process of the a-SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a-SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step.
|Progress in Photovoltaics: Research and Applications
|Published - 2003