Built-in current sensor for ΔIDDQ testing

This paper presents the implementation of a built-in current sensor for ¿IDDQ testing. In contrast to conventional built-in current monitors, this implementation has three distinctive features: 1) built-in self-calibration to the process corner in which the circuit under test was fabricated; 2) digital encoding of the quiescent current of the circuit under test for robustness purposes; and 3) enabling versatile testing strategy through the implementation of two advanced ¿IDDQ testing algorithms. The monitor has been manufactured in a 0.18-µm CMOS technology and it is based on the principle of disconnecting the device under test from the power supply during the testing phase. The monitor has a resolution of 1 µA for a background current less than 100 µA or 1% of background currents over 100 µA to a total of 1-mA full scale. The sensor operates at a maximum clock speed of 250 MHz. The quiescent current is indirectly determined by counting a number of clock pulses which occur during the time the voltage at the disconnected node drops below a reference voltage value. Basically, at the end of the count period, the counted value is inversely proportional to the quiescent current of the device under test. Then, a ¿IDDQ unit processes the counted number and the outcome is compared with a reference number to determine whether a defect exists in the device under test. Accuracy is improved by adjusting the value of the reference number and the frequency of the clock signal depending upon the particular process corner of the circuit under test. The monitor has been verified in a test chip consisting of one "DSP-like" circuit of about 250,000 transistors. Experimental results prove the usefulness of our approach as a quick and effective means for detecting defects.