Broadband giant group velocity dispersion in asymmetric InP dual layer, dual width waveguides

J.Ø. Kjellman, R. Stabile, K.A. Williams

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Abstract

Highly dispersive components enable photonic integrated circuits for ultrafast optical pulse processing. This paper presents the design of an InP device with resonant giant group velocity dispersion. The waveguides have a dual layer, dual width geometry which enables tailoring of the group velocity resonance wavelength. By cascading sections with different resonance wavelengths we show how constant group velocity dispersion can be achieved over a 50nm wavelength range. Depending on which one of two super modes is excited in this device, the dispersion can be either normal or anomalous with values of -23200 ps/(nm km) or 8200 ps/(nm km), respectively. Mode converters with >90% efficiency are designed to facilitate selective excitation of one or the other mode. The complete device is expected to be compatible with existing active/passive photonic integration technology in the InP/InGaAsP material system which should allow the creation of monolithic ultrafast optical pulse processing systems.
Original languageEnglish
Pages (from-to)3791-3800
Number of pages10
JournalJournal of Lightwave Technology
Volume35
Issue number17
Early online date15 May 2017
DOIs
Publication statusPublished - 1 Sep 2017

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group velocity
broadband
waveguides
wavelengths
photonics
pulses
converters
integrated circuits
geometry
excitation

Keywords

  • Chromatic dispersion
  • InP photonics
  • optical waveguides

Cite this

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title = "Broadband giant group velocity dispersion in asymmetric InP dual layer, dual width waveguides",
abstract = "Highly dispersive components enable photonic integrated circuits for ultrafast optical pulse processing. This paper presents the design of an InP device with resonant giant group velocity dispersion. The waveguides have a dual layer, dual width geometry which enables tailoring of the group velocity resonance wavelength. By cascading sections with different resonance wavelengths we show how constant group velocity dispersion can be achieved over a 50nm wavelength range. Depending on which one of two super modes is excited in this device, the dispersion can be either normal or anomalous with values of -23200 ps/(nm km) or 8200 ps/(nm km), respectively. Mode converters with >90{\%} efficiency are designed to facilitate selective excitation of one or the other mode. The complete device is expected to be compatible with existing active/passive photonic integration technology in the InP/InGaAsP material system which should allow the creation of monolithic ultrafast optical pulse processing systems.",
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Broadband giant group velocity dispersion in asymmetric InP dual layer, dual width waveguides. / Kjellman, J.Ø.; Stabile, R.; Williams, K.A.

In: Journal of Lightwave Technology, Vol. 35, No. 17, 01.09.2017, p. 3791-3800.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Broadband giant group velocity dispersion in asymmetric InP dual layer, dual width waveguides

AU - Kjellman, J.Ø.

AU - Stabile, R.

AU - Williams, K.A.

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N2 - Highly dispersive components enable photonic integrated circuits for ultrafast optical pulse processing. This paper presents the design of an InP device with resonant giant group velocity dispersion. The waveguides have a dual layer, dual width geometry which enables tailoring of the group velocity resonance wavelength. By cascading sections with different resonance wavelengths we show how constant group velocity dispersion can be achieved over a 50nm wavelength range. Depending on which one of two super modes is excited in this device, the dispersion can be either normal or anomalous with values of -23200 ps/(nm km) or 8200 ps/(nm km), respectively. Mode converters with >90% efficiency are designed to facilitate selective excitation of one or the other mode. The complete device is expected to be compatible with existing active/passive photonic integration technology in the InP/InGaAsP material system which should allow the creation of monolithic ultrafast optical pulse processing systems.

AB - Highly dispersive components enable photonic integrated circuits for ultrafast optical pulse processing. This paper presents the design of an InP device with resonant giant group velocity dispersion. The waveguides have a dual layer, dual width geometry which enables tailoring of the group velocity resonance wavelength. By cascading sections with different resonance wavelengths we show how constant group velocity dispersion can be achieved over a 50nm wavelength range. Depending on which one of two super modes is excited in this device, the dispersion can be either normal or anomalous with values of -23200 ps/(nm km) or 8200 ps/(nm km), respectively. Mode converters with >90% efficiency are designed to facilitate selective excitation of one or the other mode. The complete device is expected to be compatible with existing active/passive photonic integration technology in the InP/InGaAsP material system which should allow the creation of monolithic ultrafast optical pulse processing systems.

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