Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods

S.L. Diedenhofen, Gabriele Vecchi, R.E. Algra, A. Hartsuiker, O.L. Muskens, W.G.G. Immink, E.P.A.M. Bakkers, W.L. Vos, J. Gómez Rivas

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224 Citations (Scopus)

Abstract

A study was conducted to investigate the antireflective properties of layers of GaP nanorods using wavelength- and angle-dependent transmission and reflection measurements. The broadband reduction of reflection was demonstrated by zero-order or direct transmission and specular reflection measurements. The nanorods were fabricated by chemical vapor deposition (CVD) using the VLS method. It was demonstrated that the enhanced transmission and reduced reflection of the layers was related to a graded refractive index in the nanorod layer. The enhanced direct transmission, along with the total transmission and reflection revealed that scattering and absorption were weak in these layers. It was observed that the antireflection behavior over a broad wavelength and angular range, along with low amount of light scattered improved the potential of the nanorod antireflection coatings for enhanced coupling in solar cells or for more efficient light extraction from light-emitting diodes (LEDs). U7 - Export Date: 2 August 2010 U7 - Source: Scopus
Original languageEnglish
Pages (from-to)973-978
Number of pages6
JournalAdvanced Materials
Volume21
Issue number9
DOIs
Publication statusPublished - 2009

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    Diedenhofen, S. L., Vecchi, G., Algra, R. E., Hartsuiker, A., Muskens, O. L., Immink, W. G. G., Bakkers, E. P. A. M., Vos, W. L., & Gómez Rivas, J. (2009). Broad-band and omnidirectional antireflection coatings based on semiconductor nanorods. Advanced Materials, 21(9), 973-978. https://doi.org/10.1002/adma.200802767