Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

Maxim Stolyarov, Guanxiong Liu, Matthew Bloodgood, Ece Aytan, Chenglong Jiang, Rameez Samnakay, Tina T. Salguero, Denis Nika, Sergey Rumyantsev, Michael Shur, Krassimir Bozhilov, Alexander A. Balandin (Corresponding author)

Research output: Contribution to journalArticleAcademicpeer-review

40 Citations (Scopus)

Abstract

We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm−2—an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
Original languageEnglish
Pages (from-to)15774-15782
Number of pages9
JournalNanoscale
Volume2016
Issue number34
DOIs
Publication statusPublished - 2016
Externally publishedYes

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