Bottom-up grown 2D InSb nanostructures

Sasa Gazibegovic (Corresponding author), Ghada Badawy (Corresponding author), Thijs L.J. Buckers, Philipp Leubner, Jie Shen, Folkert K. de Vries, Sebastian Koelling, Leo P. Kouwenhoven, Marcel A. Verheijen, Erik P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
5 Downloads (Pure)

Abstract

Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm 2 V −1 s −1 and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

Original languageEnglish
Article number1808181
Number of pages8
JournalAdvanced Materials
Volume31
Issue number14
DOIs
Publication statusPublished - 5 Apr 2019

Fingerprint

Nanostructures
Nanowires
Electron gas
Carrier mobility
Substrates

Keywords

  • free-standing
  • high mobility
  • InSb
  • nanoflakes

Cite this

Gazibegovic, Sasa ; Badawy, Ghada ; Buckers, Thijs L.J. ; Leubner, Philipp ; Shen, Jie ; de Vries, Folkert K. ; Koelling, Sebastian ; Kouwenhoven, Leo P. ; Verheijen, Marcel A. ; Bakkers, Erik P.A.M. / Bottom-up grown 2D InSb nanostructures. In: Advanced Materials. 2019 ; Vol. 31, No. 14.
@article{a3dacf2f552a4331b0d87dc38b6f2078,
title = "Bottom-up grown 2D InSb nanostructures",
abstract = "Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm 2 V −1 s −1 and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.",
keywords = "free-standing, high mobility, InSb, nanoflakes",
author = "Sasa Gazibegovic and Ghada Badawy and Buckers, {Thijs L.J.} and Philipp Leubner and Jie Shen and {de Vries}, {Folkert K.} and Sebastian Koelling and Kouwenhoven, {Leo P.} and Verheijen, {Marcel A.} and Bakkers, {Erik P.A.M.}",
year = "2019",
month = "4",
day = "5",
doi = "10.1002/adma.201808181",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "14",

}

Bottom-up grown 2D InSb nanostructures. / Gazibegovic, Sasa (Corresponding author); Badawy, Ghada (Corresponding author); Buckers, Thijs L.J.; Leubner, Philipp; Shen, Jie; de Vries, Folkert K.; Koelling, Sebastian; Kouwenhoven, Leo P.; Verheijen, Marcel A.; Bakkers, Erik P.A.M.

In: Advanced Materials, Vol. 31, No. 14, 1808181, 05.04.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Bottom-up grown 2D InSb nanostructures

AU - Gazibegovic, Sasa

AU - Badawy, Ghada

AU - Buckers, Thijs L.J.

AU - Leubner, Philipp

AU - Shen, Jie

AU - de Vries, Folkert K.

AU - Koelling, Sebastian

AU - Kouwenhoven, Leo P.

AU - Verheijen, Marcel A.

AU - Bakkers, Erik P.A.M.

PY - 2019/4/5

Y1 - 2019/4/5

N2 - Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm 2 V −1 s −1 and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

AB - Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm 2 V −1 s −1 and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

KW - free-standing

KW - high mobility

KW - InSb

KW - nanoflakes

UR - http://www.scopus.com/inward/record.url?scp=85061893754&partnerID=8YFLogxK

U2 - 10.1002/adma.201808181

DO - 10.1002/adma.201808181

M3 - Article

C2 - 30779385

AN - SCOPUS:85061893754

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 14

M1 - 1808181

ER -

Gazibegovic S, Badawy G, Buckers TLJ, Leubner P, Shen J, de Vries FK et al. Bottom-up grown 2D InSb nanostructures. Advanced Materials. 2019 Apr 5;31(14). 1808181. https://doi.org/10.1002/adma.201808181