The boron diffusion at high concentrations was investigated in amorphous silicon pre-amorphized by germanium ion implantation. It was observed that boron diffuses in amorphous silicon at higher concentrations prior to recrystallization. The analysis of boron dopant profiles was performed by using secondary ion mass spectrometry (SIMS), using 750 eV O2+ primary ion with an oblique angle of incidence. The silicon amorphization depths were investigated using rutherford backscattering (RBS) channeling measurements. The results show that the addition of fluorine does not enhance the boron diffusivity in amorphous silicon.