Boride-enhanced diffusion in silicon: bulk and surface layers

N.E.B. Cowern, M.J.J. Theunissen, F. Roozeboom, J.G.M. Van Berkum

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Abstract

Epitaxial silicon bonde layers, located at the surface or within the bulk of single-crystal silicon, give rise to enhanced diffusion of B during annealing. A submonolayer buried boride layer releases ≈0.4 interstitials per B atom in the layer, generating a transient diffusion enhancement in the range of 10-100 for several minutes at 900 °C. The resulting profile broadening is comparable to that caused by ion implantation damage. At the same temperature, surface boride layers generate a diffusion enhancement of ∼6, part of which arises from the B diffusion flux and part from the chemical influence of the boride layer.

Original languageEnglish
Pages (from-to)181-183
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number2
DOIs
Publication statusPublished - 12 Jul 1999
Externally publishedYes

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    Cowern, N. E. B., Theunissen, M. J. J., Roozeboom, F., & Van Berkum, J. G. M. (1999). Boride-enhanced diffusion in silicon: bulk and surface layers. Applied Physics Letters, 75(2), 181-183. https://doi.org/10.1063/1.124312