Boosting hole mobility in coherently strained [110]-oriented Ge-Si core-shell nanowires

S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T.T. Nguyen, M.A. Verheijen, P.M. Koenraad, F.A. Zwanenburg, E.P.A.M. Bakkers

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Abstract

The ability of core-shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate strain-induced defect formation and thus to boost important electronic properties such as carrier mobility. Here we demonstrate how the hole mobility of [110]-oriented Ge-Si core-shell nanowires can be substantially enhanced thanks to the realization of large band offset and coherent strain in the system, reaching values as high as 4200 cm2/(Vs) at 4 K and 1600 cm2/(Vs) at room temperature for high hole densities of 1019 cm-3. We present a direct correlation of (i) mobility, (ii) crystal direction, (iii) diameter, and (iv) coherent strain, all of which are extracted in our work for individual nanowires. Our results imply [110]-oriented Ge-Si core-shell nanowires as a promising candidate for future electronic and quantum transport devices.

Original languageEnglish
Pages (from-to)2259-2264
Number of pages6
JournalNano Letters
Volume17
Issue number4
DOIs
Publication statusPublished - 12 Apr 2017

Fingerprint

Hole mobility
hole mobility
Nanowires
nanowires
Strain relaxation
Carrier mobility
carrier mobility
acceleration (physics)
electronics
ingredients
Electronic properties
Heterojunctions
Defects
Crystals
defects
room temperature
crystals
Temperature

Keywords

  • defect-free
  • epitaxy
  • germanium
  • mobility
  • Nanowire
  • silicon

Cite this

Conesa-Boj, S. ; Li, A. ; Koelling, S. ; Brauns, M. ; Ridderbos, J. ; Nguyen, T.T. ; Verheijen, M.A. ; Koenraad, P.M. ; Zwanenburg, F.A. ; Bakkers, E.P.A.M. / Boosting hole mobility in coherently strained [110]-oriented Ge-Si core-shell nanowires. In: Nano Letters. 2017 ; Vol. 17, No. 4. pp. 2259-2264.
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Boosting hole mobility in coherently strained [110]-oriented Ge-Si core-shell nanowires. / Conesa-Boj, S.; Li, A.; Koelling, S.; Brauns, M.; Ridderbos, J.; Nguyen, T.T.; Verheijen, M.A.; Koenraad, P.M.; Zwanenburg, F.A.; Bakkers, E.P.A.M.

In: Nano Letters, Vol. 17, No. 4, 12.04.2017, p. 2259-2264.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Li, A.

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AU - Ridderbos, J.

AU - Nguyen, T.T.

AU - Verheijen, M.A.

AU - Koenraad, P.M.

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AU - Bakkers, E.P.A.M.

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