Abstract
We have observed a substantial blue shift of the
lowest energy transition in a composite double quantum well
made from materials with a type-TI band line-up. The pho
tocurrent measurements demonstrate a linear Stark shift due
to the separate confinement in real space for electrons and
holes. The charge separation is up to 45 Å in the strain bal
anced InAs0.42P0.58/Gao.67In0.33As samples. The low tem
perature photoluminescence reveals that an electric field of
only 30 kV/cm produces the blue shift of more than 25 meV.
All our measurements agree with the calculations within the
framework of Bir-Pikus strain Hamiltonian.
| Original language | English |
|---|---|
| Title of host publication | 25th International Conference on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan : part 1 |
| Editors | N. Miura, T. Ando |
| Place of Publication | Berlin |
| Publisher | Springer |
| Pages | 517-518 |
| ISBN (Print) | 3-540-41778-8 |
| Publication status | Published - 2001 |
| Event | 25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan Duration: 17 Sept 2000 → 22 Sept 2000 |
Publication series
| Name | Springer Proceedings in Physics |
|---|---|
| ISSN (Print) | 0930-8989 |
Conference
| Conference | 25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan |
|---|---|
| Country/Territory | Japan |
| City | Osaka |
| Period | 17/09/00 → 22/09/00 |
| Other | 25th Int. Conf. on the Physics of Semiconductors |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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