Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling

P.W.M. Blom; C. Smit; J.E.M. Haverkort; J.H. Wolter

doi:10.1063/1.109375

Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling

P.W.M. Blom, C. Smit, J.E.M. Haverkort, J.H. Wolter

Applied Physics and Science Education

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Abstract

We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined Γ state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the Γ→X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filling at high excitation densities and small excess energies, which allows us to measure a Γ→X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.

Original language	English
Pages (from-to)	2393-2395
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	19
DOIs	https://doi.org/10.1063/1.109375
Publication status	Published - 1 Dec 1993

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title = "Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling",

abstract = "We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined Γ state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the Γ→X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filling at high excitation densities and small excess energies, which allows us to measure a Γ→X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.",

author = "P.W.M. Blom and C. Smit and J.E.M. Haverkort and J.H. Wolter",

year = "1993",

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T1 - Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling

AU - Blom, P.W.M.

AU - Smit, C.

AU - Haverkort, J.E.M.

AU - Wolter, J.H.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined Γ state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the Γ→X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filling at high excitation densities and small excess energies, which allows us to measure a Γ→X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.

AB - We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined Γ state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the Γ→X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filling at high excitation densities and small excess energies, which allows us to measure a Γ→X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.

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DO - 10.1063/1.109375

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AN - SCOPUS:0038091786

SN - 0003-6951

VL - 62

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EP - 2395

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling

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