Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X-state band filling

P.W.M. Blom, C. Smit, J.E.M. Haverkort, J.H. Wolter

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Abstract

We report an experimental study of the optical properties of a GaAs/AlAs short period superlattice (SPSL) by photoluminescence and time-resolved two-pulse correlation experiments. Our SPSL is designed in such a way that the lowest confined Γ state in the GaAs is only slight (30-50 meV) above the X states in the AlAs. Therefore the Γ→X transfer due to LO-phonon emission or interface scattering is prohibited by X-band filling at high excitation densities and small excess energies, which allows us to measure a Γ→X transfer time induced by LO-phonon absorption of 20 ps. By adjusting the laser energy, excitation density, and temperature we are able to transform the emission spectrum of the SPSL completely from a type-I into a type-II transition.

Original languageEnglish
Pages (from-to)2393-2395
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number19
DOIs
Publication statusPublished - 1 Dec 1993

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