Bispectrum of the 1/F noise in diodes on quantum dots and wells

A.V. Yakimov, A.V. Belyakov, M.Y. Perov, L.K.J. Vandamme

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

The bispectrum of the 1/f noise is investigated in the present work. For the Gaussian noise it equals zero. LEDs on self-organized InAs/GaAs quantum dots and laser diodes on In0.2Ga0.8As/GaAs/InGaP quantum wells made in Russia were tested. The voltage noise was analyzed in a wide interval of currents through the diodes. Estimates of the probability density function and semi-invariants of the noise have not revealed any appreciable deviations from the Gauss law. Noise spectra Sv(f)in the range 1 Hz - 20 kHz were analyzed. In most cases the frequency exponent γs of the spectrum is close to one, the Hooge’s parameter αH has magnitude of the order 10-4. The bispectrum Bv(f1,f2of the noise is a complex function of frequencies f1 and f2. Its absolute value is decreasing while moving from the beginning of the frequency plane Of1f2. The decrease along the bisector (f1 = f2 = f) follows the power law characterized by the frequency exponent γB ≈ 1.5 γs. The dependence of the "height" of |Bv(f,f)| on the current through the diode is qualitatively similar to this one for the spectrum. The power law describes these dependences, however the exponents are essentially different.
Original languageEnglish
Title of host publicationSPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Place of PublicationBellingham
PublisherSPIE
Pages40-48
DOIs
Publication statusPublished - 2003

Publication series

NameProceedings of SPIE
Volume5115

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