Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag

Kris Myny, Maarten Rockelé, Adrian Chasin, Duy Vu Pham, Jurgen Steiger, Silviu Botnaras, Dennis Weber, Bernhard Herold, Jurgen Ficker, Bas Van Der Putten, Gerwin Gelinck, Jan Genoe, Wim Dehaene, Paul Heremans

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

31 Citations (Scopus)

Abstract

The ambition of printing item-level RFID tags is one of the driving forces behind printed electronics research. Organic RFID tags have been shown, initially using p-type organic semiconductors [1-4]. The introduction of n-type organic semiconductors with reasonable performance made organic CMOS conceivable [5] and organic CMOS RFID tags were shown [6]. However, all currently reported organic RFID tags are based on a tag-talks-first principle: as soon as the tag gets powered from the RF field, its code is transmitted at a data rate determined by an internal ring oscillator. Practical RFID systems will need to be able to read multiple RFID tags within the reach of the reader antenna. Existing anti-collision protocols implemented in organic RFID tags [2,4] are limited to about maximum 4 tags and come at the cost of a slow reading time. In this paper, we for the first time realize a reader-talks-first low-temperature thin-film transistor (TFT) RFID circuit. We use a complementary hybrid organic/oxide technology. As organic transistors with reasonable channel lengths (≥2μm) have a cut-off frequency below 13.56MHz, the base carrier frequency of HF communication, present technologies on foil do not yet allow to extract the circuit clock as a fraction of the base carrier. We solve this by introducing an original uplink (reader-to-tag) scheme, in which a slow clock (compatible with our transistors' speed) is transmitted as amplitude-modulation on the base carrier while data is encoded on this clock by pulse width modulation (PWM).

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages312-314
Number of pages3
Volume55
DOIs
Publication statusPublished - 11 May 2012
Event59th IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, United States
Duration: 19 Feb 201223 Feb 2012
Conference number: 59

Conference

Conference59th IEEE International Solid-State Circuits Conference, ISSCC 2012
Abbreviated titleISSCC 2012
Country/TerritoryUnited States
CitySan Francisco
Period19/02/1223/02/12
Other“Silicon Systems for Sustainability”

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