BiCMOS high-performance ICs : from DC to mm-wave

A.B. Smolders; H. Gul; E. Heijden, van der; P. Gamand; M. Geurts

doi:10.1109/BIPOL.2009.5314130

BiCMOS high-performance ICs : from DC to mm-wave

A.B. Smolders
, H. Gul
, E. Heijden, van der
, P. Gamand
, M. Geurts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

427 Downloads (Pure)

Abstract

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

Original language	English
Title of host publication	Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	115-122
ISBN (Print)	978-1-4244-4894-4
DOIs	https://doi.org/10.1109/BIPOL.2009.5314130
Publication status	Published - 2009

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title = "BiCMOS high-performance ICs : from DC to mm-wave",

abstract = "Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.",

author = "A.B. Smolders and H. Gul and \{Heijden, van der\}, E. and P. Gamand and M. Geurts",

year = "2009",

doi = "10.1109/BIPOL.2009.5314130",

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publisher = "Institute of Electrical and Electronics Engineers",

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BiCMOS high-performance ICs : from DC to mm-wave. / Smolders, A.B.; Gul, H.; Heijden, van der, E. et al.
Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 115-122.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - BiCMOS high-performance ICs : from DC to mm-wave

AU - Smolders, A.B.

AU - Gul, H.

AU - Heijden, van der, E.

AU - Gamand, P.

AU - Geurts, M.

PY - 2009

Y1 - 2009

N2 - Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

AB - Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

U2 - 10.1109/BIPOL.2009.5314130

DO - 10.1109/BIPOL.2009.5314130

M3 - Conference contribution

SN - 978-1-4244-4894-4

SP - 115

EP - 122

BT - Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

BiCMOS high-performance ICs : from DC to mm-wave

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