Abstract
Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
Original language | English |
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Title of host publication | Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 115-122 |
ISBN (Print) | 978-1-4244-4894-4 |
DOIs | |
Publication status | Published - 2009 |