BiCMOS high-performance ICs : from DC to mm-wave

A.B. Smolders, H. Gul, E. Heijden, van der, P. Gamand, M. Geurts

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
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Abstract

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.
Original languageEnglish
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages115-122
ISBN (Print)978-1-4244-4894-4
DOIs
Publication statusPublished - 2009

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    Smolders, A. B., Gul, H., Heijden, van der, E., Gamand, P., & Geurts, M. (2009). BiCMOS high-performance ICs : from DC to mm-wave. In Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy (pp. 115-122). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/BIPOL.2009.5314130