Bias-dependent Spin Relaxation in Spin-LED

C.A.C. Bosco

Bias-dependent Spin Relaxation in Spin-LED

C.A.C. Bosco

Physics of Nanostructures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

We have investigated the bias-dependent spin relaxation in Cu-CoFe-AlOx-GaAs/AlGaAs-type of Spin-LEDs using microscopic time-resolved magnetization modulation spectroscopy (TIMMS). We observed a significant dependence ofthe electron spin relaxation time (effects as large as 40%) as a function of applied bias. The additional spin relaxation at non-zero bias is found to scale almost linearly with the injection current, and thereby with the current-induced hole density in the active region. This observation is indicative for a dominant contribution by Bir-Aronov-Pikus (BAP) electron-hole spin-flip scattering. In agreement with this observation, a similar BAP-enhanced spin relaxation shows up at increased laser fluence. From spatio-temporal imaging of spin relaxation, scanning pump and probe beams across the 50 µm outside of optical window, we found a significant position dependence (lateral effects) of the spin dynamics.

Original language	English
Title of host publication	Visit to IMEC; Leuven, Belgium (22 nov 2004)
Publication status	Published - 2004

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title = "Bias-dependent Spin Relaxation in Spin-LED",

abstract = "We have investigated the bias-dependent spin relaxation in Cu-CoFe-AlOx-GaAs/AlGaAs-type of Spin-LEDs using microscopic time-resolved magnetization modulation spectroscopy (TIMMS). We observed a significant dependence ofthe electron spin relaxation time (effects as large as 40%) as a function of applied bias. The additional spin relaxation at non-zero bias is found to scale almost linearly with the injection current, and thereby with the current-induced hole density in the active region. This observation is indicative for a dominant contribution by Bir-Aronov-Pikus (BAP) electron-hole spin-flip scattering. In agreement with this observation, a similar BAP-enhanced spin relaxation shows up at increased laser fluence. From spatio-temporal imaging of spin relaxation, scanning pump and probe beams across the 50 µm outside of optical window, we found a significant position dependence (lateral effects) of the spin dynamics.",

author = "C.A.C. Bosco",

year = "2004",

language = "English",

booktitle = "Visit to IMEC; Leuven, Belgium (22 nov 2004)",

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TY - GEN

T1 - Bias-dependent Spin Relaxation in Spin-LED

AU - Bosco, C.A.C.

PY - 2004

Y1 - 2004

N2 - We have investigated the bias-dependent spin relaxation in Cu-CoFe-AlOx-GaAs/AlGaAs-type of Spin-LEDs using microscopic time-resolved magnetization modulation spectroscopy (TIMMS). We observed a significant dependence ofthe electron spin relaxation time (effects as large as 40%) as a function of applied bias. The additional spin relaxation at non-zero bias is found to scale almost linearly with the injection current, and thereby with the current-induced hole density in the active region. This observation is indicative for a dominant contribution by Bir-Aronov-Pikus (BAP) electron-hole spin-flip scattering. In agreement with this observation, a similar BAP-enhanced spin relaxation shows up at increased laser fluence. From spatio-temporal imaging of spin relaxation, scanning pump and probe beams across the 50 µm outside of optical window, we found a significant position dependence (lateral effects) of the spin dynamics.

AB - We have investigated the bias-dependent spin relaxation in Cu-CoFe-AlOx-GaAs/AlGaAs-type of Spin-LEDs using microscopic time-resolved magnetization modulation spectroscopy (TIMMS). We observed a significant dependence ofthe electron spin relaxation time (effects as large as 40%) as a function of applied bias. The additional spin relaxation at non-zero bias is found to scale almost linearly with the injection current, and thereby with the current-induced hole density in the active region. This observation is indicative for a dominant contribution by Bir-Aronov-Pikus (BAP) electron-hole spin-flip scattering. In agreement with this observation, a similar BAP-enhanced spin relaxation shows up at increased laser fluence. From spatio-temporal imaging of spin relaxation, scanning pump and probe beams across the 50 µm outside of optical window, we found a significant position dependence (lateral effects) of the spin dynamics.

M3 - Conference contribution

BT - Visit to IMEC; Leuven, Belgium (22 nov 2004)

ER -