Abstract

In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3x2μm<sup>2</sup> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra small series resistance and junction capacitance as low as 6.5 and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.
Original languageEnglish
Article number9531477
JournalIEEE Journal of Selected Topics in Quantum Electronics
VolumeXX
Issue numberX
DOIs
Publication statusE-pub ahead of print - 8 Sep 2021

Keywords

  • Bandwidth
  • Optical device fabrication
  • Optical variables measurement
  • Indium phosphide
  • III-V semiconductor materials
  • High-speed optical techniques
  • Silicon

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