Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform

Jasper de Graaf; Xinran Zhao; Dimitrios Konstantinou; Menno van den Hout; Sander Reniers; Longfei Shen; Sjoerd van der Heide; Simon Rommel; Idelfonso Tafur Monroy; Chigo M. Okonkwo; Zizheng Cao; Ton Koonen; Kevin Williams; Yuqing Jiao

doi:10.1109/JSTQE.2021.3110411

Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform

Jasper de Graaf (Corresponding author), Xinran Zhao (Corresponding author), Dimitrios Konstantinou, Menno van den Hout, Sander Reniers, Longfei Shen, Sjoerd van der Heide, Simon Rommel, Idelfonso Tafur Monroy, Chigo M. Okonkwo, Zizheng Cao, Ton Koonen, Kevin Williams, Yuqing Jiao

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

Original language	English
Article number	3802010
Number of pages	10
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/JSTQE.2021.3110411
Publication status	Published - 1 Mar 2022

Keywords

Bandwidth
Optical device fabrication
Optical variables measurement
Indium phosphide
III-V semiconductor materials
High-speed optical techniques
Silicon
Photodiode (PD)
waveguide integrated
uni-traveling-carrier photodiode (UTC-PD)
nanophotonic
InP-membrane-on-silicon

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10.1109/JSTQE.2021.3110411Licence: CC BY

published versionFinal published version, 2.39 MBLicence: CC BY

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Graaf, J. D., Zhao, X., Konstantinou, D., van den Hout, M., Reniers, S., Shen, L., van der Heide, S., Rommel, S., Tafur Monroy, I., Okonkwo, C. M., Cao, Z., Koonen, T., Williams, K., & Jiao, Y. (2022). Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform. IEEE Journal of Selected Topics in Quantum Electronics, 28(2), Article 3802010. https://doi.org/10.1109/JSTQE.2021.3110411

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title = "Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform",

abstract = "In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.",

keywords = "Bandwidth, Optical device fabrication, Optical variables measurement, Indium phosphide, III-V semiconductor materials, High-speed optical techniques, Silicon, Photodiode (PD), waveguide integrated, uni-traveling-carrier photodiode (UTC-PD), nanophotonic, InP-membrane-on-silicon",

author = "Graaf, {Jasper de} and Xinran Zhao and Dimitrios Konstantinou and {van den Hout}, Menno and Sander Reniers and Longfei Shen and {van der Heide}, Sjoerd and Simon Rommel and {Tafur Monroy}, Idelfonso and Okonkwo, {Chigo M.} and Zizheng Cao and Ton Koonen and Kevin Williams and Yuqing Jiao",

year = "2022",

month = mar,

day = "1",

doi = "10.1109/JSTQE.2021.3110411",

language = "English",

volume = "28",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

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Graaf, JD, Zhao, X, Konstantinou, D, van den Hout, M , Reniers, S, Shen, L, van der Heide, S , Rommel, S , Tafur Monroy, I , Okonkwo, CM, Cao, Z, Koonen, T , Williams, K & Jiao, Y 2022, 'Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform', IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, 3802010. https://doi.org/10.1109/JSTQE.2021.3110411

Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform. / Graaf, Jasper de (Corresponding author); Zhao, Xinran (Corresponding author); Konstantinou, Dimitrios et al.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 28, No. 2, 3802010, 01.03.2022.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Graaf, Jasper de

AU - Zhao, Xinran

AU - Konstantinou, Dimitrios

AU - van den Hout, Menno

AU - Reniers, Sander

AU - Shen, Longfei

AU - van der Heide, Sjoerd

AU - Rommel, Simon

AU - Tafur Monroy, Idelfonso

AU - Okonkwo, Chigo M.

AU - Cao, Zizheng

AU - Koonen, Ton

AU - Williams, Kevin

AU - Jiao, Yuqing

PY - 2022/3/1

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AB - In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

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KW - Optical device fabrication

KW - Optical variables measurement

KW - Indium phosphide

KW - III-V semiconductor materials

KW - High-speed optical techniques

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DO - 10.1109/JSTQE.2021.3110411

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SN - 1077-260X

VL - 28

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 2

M1 - 3802010

ER -

Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform

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High Capacity Optical Transmission Lab

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Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform

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