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In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

Original languageEnglish
Article number3802010
Number of pages10
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number2
Publication statusPublished - 1 Mar 2022


  • Bandwidth
  • Optical device fabrication
  • Optical variables measurement
  • Indium phosphide
  • III-V semiconductor materials
  • High-speed optical techniques
  • Silicon
  • Photodiode (PD)
  • waveguide integrated
  • uni-traveling-carrier photodiode (UTC-PD)
  • nanophotonic
  • InP-membrane-on-silicon


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