In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3x2μm<sup>2</sup> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra small series resistance and junction capacitance as low as 6.5 and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.
- Optical device fabrication
- Optical variables measurement
- Indium phosphide
- III-V semiconductor materials
- High-speed optical techniques