BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers

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Abstract

In this publication the challenges of bonding InP and BiCMOS wafers with high topology are described. A possible process is discussed. Planarization with thick BCB is motivated and the challenges of wafer alignment are explained.
Original languageEnglish
Title of host publicationProceedings Symposium IEEE Photonics Society Benelux, 2018, Brussels, Belgium
Pages160-163
Number of pages4
Publication statusPublished - Nov 2018
EventIEEE Photonics Benelux Chapter Annual Symposium 2018 - Paleis der Academiën, Brussels, Belgium
Duration: 15 Nov 201816 Nov 2018

Conference

ConferenceIEEE Photonics Benelux Chapter Annual Symposium 2018
CountryBelgium
CityBrussels
Period15/11/1816/11/18

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Cite this

Spiegelberg, M., van Engelen, J., de Vries, T., Williams, K., & van der Tol, J. (2018). BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers. In Proceedings Symposium IEEE Photonics Society Benelux, 2018, Brussels, Belgium (pp. 160-163)