Band bending at the InSb-CdTe interface

R.G. van Welzenis; E.J.D. Vredenbregt

doi:10.1016/0038-1101(85)90185-6

Band bending at the InSb-CdTe interface

R.G. van Welzenis
, E.J.D. Vredenbregt

Applied Physics and Science Education

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

Original language	English
Pages (from-to)	1057-1063
Number of pages	7
Journal	Solid-State Electronics
Volume	28
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(85)90185-6
Publication status	Published - 1 Nov 1985

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10.1016/0038-1101(85)90185-6

http://adsabs.harvard.edu/abs/1985SSEle..28.1057V

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title = "Band bending at the InSb-CdTe interface",

abstract = "The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.",

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AU - Vredenbregt, E.J.D.

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N2 - The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

AB - The band diagrams of InSb/CdTe heterojunctions were calculated. It is shown that it should be relatively easy to create a situation in which there is virtually no band bending at the InSb side of the junction. This provides almost ideal conditions for quantum well devices.

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DO - 10.1016/0038-1101(85)90185-6

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EP - 1063

JO - Solid-State Electronics

JF - Solid-State Electronics

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ER -

Band bending at the InSb-CdTe interface

Abstract

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